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даташит BAT54W PDF ( Datasheet )

BAT54W Datasheet Download - Philips

Номер произв BAT54W
Описание Schottky barrier (double) diodes
Производители Philips
логотип Philips логотип 

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BAT54W Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BAT54W series
Schottky barrier (double) diodes
Product specification
Supersedes data of October 1993
1996 Mar 19
http://www.Datasheet4U.com







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BAT54W Даташит, Описание, Даташиты
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAT54W series
FEATURES
Low forward voltage
Guard ring protected
Very small SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
PINNING
PIN
W
BAT54
AW CW
SW
1 a k1 a1 a1
2 n.c. k2 a2 k2
3 k a1, a2 k1, k2 k1, a2
handbook, 2 columns
3
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
TYPE NUMBER
BAT54W
BAT54AW
BAT54CW
BAT54SW
MARKING
CODE
L4
42
43
44
1
Top view
2
MBC870
Fig.1 Simplified outline
(SOT323) and pin
configuration.
3
12
n.c.
MLC357
Fig.2 BAT54W single diode
configuration (symbol).
3
12
MLC360
Fig.3 BAT54AW diode
configuration (symbol).
3
12
MLC359
Fig.4 BAT54CW diode
configuration (symbol).
3
12
MLC358
Fig.5 BAT54SW diode
configuration (symbol).
1996 Mar 19
2







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BAT54W Даташит, Описание, Даташиты
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAT54W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
Tamb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
operating ambient temperature
tp 1s ; δ≤ 0.5
tp < 10 ms
Tamb 25 °C
MIN. MAX. UNIT
30 V
200 mA
300 mA
600 mA
200 mW
65 +150 °C
125 °C
65 +125 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
trr reverse recovery time
Cd diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
MAX.
UNIT
see Fig.6
IF = 0.1 mA
IF = 1m A
IF =1 0m A
IF =3 0m A
IF = 100 mA
VR = 25 V; note 1; see Fig.7
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ; measured at
IR = 1 mA: see Fig.9
f = 1 MHz; VR = 1 V; see Fig.8
240
320
400
500
800
2
5n
10
mV
mV
mV
mV
mV
µA
s
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT323 standard mounting conditions.
VALUE
625
UNIT
K/W
1996 Mar 19
3










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