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2SK3079 Datasheet Download - Toshiba Semiconductor

Номер произв 2SK3079
Описание FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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2SK3079 Даташит, Описание, Даташиты
2SK3079
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3079
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
l Output Power
l Gain :
l Drain Efficiency
: PO = 33.0dBmW (Min)
GP = 7.0dB (Min)
: ηD = 40% (Min)
Unit: mm
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC S
YMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature Range
VDSS 10
VGSS 5
ID
PD* 20.
Tch 150
Tstg
5
0
45~150 °
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
UNIT
V
V
A
W
°C
C
MARKING
JEDEC —
JEITA
TOSHIBA
25N1A
1 2001-11-20
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2SK3079 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC S
Output Power
Drain Efficiency
Power Gain
Threshold Voltage
Drain Cut-off Current
Gate-Source Leakage Current
Load Mismatch
YMBOL
TEST CONDITION
PO 33.
ηD 40.
GP
Vth
IDSS
IGSS
VDS = 4.8V
Iidle = 800 mA (VGS = adjust)
f = 915MHz, Pi = 26dBmW
ZG = ZL = 50
VDS = 4.8 V, ID = 0.5 mA
VDS = 10 V, VGS = 0 V
VGS = 5 V, VDS = 0 V
VDS = 6.5 V, f = 915 MHz
Pi = 26dBmW
PO = 33.0dBmW (VGS = adjust)
VSWR LOAD 10: 1 all phase
2SK3079
MIN TYP. MAX UNIT
0
0
7.0 —
0.30
1.30
10
5
dBmW
%
dB
V
µA
µA
No Degradation
CAUTION
This transistor is the electrostatic sensitive device.
Please handle with caution.
RF OUTPUT POWER TEST FIXTURE
2 2001-11-20







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2SK3079 Даташит, Описание, Даташиты
2SK3079
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general ca n malfunction or f ail du e t o t heir in herent electrical s ensitivity and vulnerability to physical
stress. It i s t he r esponsibility of th e buy er, w hen ut ilizing T OSHIBA produ cts, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set f orth in the m ost rec ent TOSHIBA products s pecifications. Als o, please ke ep in mind th e pr ecautions an d
conditions set fort h in the “H andling Guide for Semi conductor D evices,” or “T OSHIBA Semic onductor Reliability
Handbook” etc..
· The TO SHIBA products l isted in thi s do cument ar e inte nded for u sage in g eneral electronics app lications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). T hese T OSHIBA prod ucts are ne ither int ended n or w arranted for u sage i n e quipment th at re quires
extraordinarily high quality and/or reliability or a malfunction or fa ilure of w hich may cause loss of human life or
bodily inj ury (“U nintended U sage”). U nintended U sage i nclude at omic energy control i nstruments, a irplane or
spaceship i nstruments, tra nsportation in struments, traf fic signal in struments, c ombustion control in struments,
medical i nstruments, al l ty pes of safety dev ices, et c.. U nintended U sage of T OSHIBA produ cts l isted i n th is
document shall be made at the customer’s own risk.
· The informa tion con tained h erein i s pre sented o nly as a guid e for the applications of our prod ucts. N o
responsibility i s assumed by TOSHIBA C ORPORATION for any infringements of int ellectual pr operty or other
rights of the third parties which may result from its use. N o license is granted by implication or otherwise un der
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
3 2001-11-20










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