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даташит B1232 PDF ( Datasheet )

B1232 Datasheet Download - Sanyo Semicon Device

Номер произв B1232
Описание 2SB1232
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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B1232 Даташит, Описание, Даташиты
Ordering number:EN3261A
2SB1232 : PNP Epitaxial Planar Silicon Transistor
2SD1842 : NPN Triple Diffused Planar Silicon Transistor
2SB1232/2SD1842
100V/40A Switching Applications
Applications
· Motor drivers, relay drivers, converters, and other
general high-current switching applications.
Features
· Large current capacity and wide ASO.
· Low saturation voltage.
Package Dimensions
unit:mm
2022A
[2SB1232/2SD1842]
( ) : 2SB1232
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Pal rameter
CoVllector-to-Base Voltage
CoVllector-to-Emitter Voltage
EmV itter-to-Base Voltage
CoI llector Current
CoI llector Current (Pulse)
BaI se Current
CoPllector Dissipation
Sysmbo
CBO
CEO
EBO
C
CP
B
C
Juj nction Temperature
Stgorage Temperature
T
Tst
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Cosndition
Pal rameter
CoI llector Cutoff Current
EmI itter Cutoff Current
DC Current Gain
CoVllector-to-Emitter Saturation Voltage
BaVse-to-Emitter Saturation Voltage
Sysmbo
Condition
CBO
EBO
hFE1V
hFE2V
CE(sat)
BE(sat)
VCB=(–)100V, IE=10
VEB=(–)5V, IC=10
CE=(–)2V, IC=*(–)4A
CE=(–)2V, IC=0(–)16A
IC=(–)16A, IB=8(–)1.6A
IC=(–)16A, IB=5(–)1.6A
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Rtating
(–V)110
(–V)100
(V–)6
(–A)40
(–A)65
(–A)12
3W.0
15W0
150
–55 to +150
Uni
˚C
˚C
Ratings
mipn txy
5*0
2
ma
(A–)0.
(A–)0.
140
(V–)0.
(V–)1.
Unit
m
m
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/71095TS/7190MH, TA (KOTO) No.3261–1/4
http://www.Datasheet4U.com







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B1232 Даташит, Описание, Даташиты
2SB1232/2SD1842
Parameter
Symbol
Conditions
CVollector-to-Base Breakdown Voltage
CVollector-to-Emitter Breakdown Voltage
EVmitter-to-Base Breakdown Voltage
(BR)CBO
(BR)CEO
(BR)EBO
IC=(–)1mA, IE=0
IC=(–)5mA, RBE=
IC=(–)1mA, IC=60
* : For the hFE1 of the 2SB1232/2SD1842, specify at least two ranks in principle.
50 P 100 70 Q 14
Ratings
mpin txy
(V–)11
(V–)100
(V–)
ma
Unit
No.3261–2/4







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B1232 Даташит, Описание, Даташиты
2SB1232/2SD1842
No.3261–3/4










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