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PDF CAT22C10 Data sheet ( Hoja de datos )

Número de pieza CAT22C10
Descripción 256-Bit Nonvolatile CMOS Static RAM
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CAT22C10
256-Bit Nonvolatile CMOS Static RAM
FEATURES
s Single 5V Supply
s Fast RAM Access Times:
–200ns
–300ns
s Infinite EEPROM to RAM Recall
s CMOS and TTL Compatible I/O
s Power Up/Down Protection
s 100,000 Program/Erase Cycles (E2PROM)
s Low CMOS Power Consumption:
–Active: 40mA Max.
–Standby: 30µA Max.
s JEDEC Standard Pinouts:
–18-lead DIP
–16-lead SOIC
s 10 Year Data Retention
s Commercial, Industrial and Automotive
Temperature Ranges
DESCRIPTION
The CAT22C10 NVRAM is a 256-bit nonvolatile memory
organized as 64 words x 4 bits. The high speed Static
RAM array is bit for bit backed up by a nonvolatile
EEPROM array which allows for easy transfer of data
from RAM array to EEPROM (STORE) and from
EEPROM to RAM (RECALL). STORE operations are
completed in 10ms max. and RECALL operations typi-
cally within 1.5 µs. The CAT22C10 features unlimited
RAM write operations either through external RAM
writes or internal recalls from EEPROM. Internal false
store protection circuitry prohibits STORE operations
when VCC is less than 3.0V.
The CAT22C10 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles (EEPROM)
and has a data retention of 10 years. The device is
available in JEDEC approved 18-lead plastic DIP and
16-lead SOIC packages.
PIN CONFIGURATION
DIP Package (L)
SOIC Package (W)
NC
A4
A3
A2
A1
A0
CS
Vss
STORE
1
2
3
4
5
6
7
8
9
1 8 Vcc
1 7 NC
1 6 A5
1 5 I/O3
1 4 I/O2
13 I/O1
12 I/O0
11 WE
A4
A3
A2
A1
A0
CS
Vss
STORE
1
2
3
4
5
6
7
8
10 RECALL
1 6 Vcc
1 5 A5
1 4 I/O4
13 I/O3
12 I/O2
11 I/O1
10 WE
9 RECALL
PIN FUNCTIONS
Pin Name
A0–A5
I/O0–I/O3
WE
CS
RECALL
STORE
VCC
VSS
NC
Function
Address
Data In/Out
Write Enable
Chip Select
Recall
Store
+5V
Ground
No Connect
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice.
1
Doc. No. MD-1082, Rev. R
http://www.Datasheet4U.com

1 page




CAT22C10 pdf
A.C. CHARACTERISTICS, Store Cycle
VCC = +5V ±10%, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Max.
tSTC Store Time
10
tSTP Store Pulse Width
200
tSTZ(1)
Store Disable Time
100
tOST(1)
Store Enable Time
0
Units
ms
ns
ns
ns
CAT22C10
Conditions
CL = 100pF + 1TTL gate
VOH = 2.2V, VOL = 0.65V
VIH = 2.2V, VIL = 0.65V
A.C. CHARACTERISTICS, Recall Cycle
VCC = +5V ±10%, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Max.
tRCC
Recall Cycle Time
1.4
tRCP Recall Pulse Width
300
tRCZ Recall Disable Time
100
tORC
Recall Enable Time
0
tARC Recall Data Access Time
1.1
Units
µs
ns
ns
ns
µs
Conditions
CL = 100pF + 1TTL gate
VOH = 2.2V, VOL = 0.65V
VIH = 2.2V, VIL = 0.65V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice.
5
Doc No. MD-1082, Rev. R

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