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Datasheet GFP50N06 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GFP50N06 | MOSFET, Transistor Chinahaiso electronic Co.Ltd
http://www.chinahaiso.com
MOSFET GFP 50N06
GFP 50N06
FEATURES (参数) Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃)
Absolute maximum ratings Characteristics
T=25℃ unless othe | Chinahaiso electronic | mosfet |
GFP Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GFP201 | Cermet Industrial Panel Controls GF201 Series
TOCOS® PANEL CONTROLS
20mm Diameter, Single-Turn, Cermet Industrial Panel Controls
GFP201
GF201
Features
Ⅲ 20mm diameter, single-turn industrial panel controls Ⅲ Cermet film element Ⅲ Single unit, single shaft Ⅲ Excellent environmental characteristics Ⅲ Wide temperature TOCOS data | | |
2 | GFP4N60 | N-channel enhancement mode power field effect Transistors Chinahaiso electronic Co.Ltd
http://www.chinahaiso.com
MOSFET GFP 4N60
GFP 4N60
General description These N-channel enhancement mode power field effect
Transistors are produced using planar stripe DMOS technology. This advanced technology has been especially tailored to
minimize on-state r Chinahaiso electronic transistor | | |
3 | GFP50N03 | N-Channel Enhancement-Mode MOSFET GFP50N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
VDS 30V RDS(ON) 13mΩ ID 50A
D
TO-220AB
0.415 (10.54) Max.
0.154 (3.91) 0.142 (3.60)Dia.
0.113 (2.87)
* 0.102 (2.56)
0.155 (3.93) D 0.134 (3.40)
0.410 (10.41) 0.350 (8.89)
PIN G DS
0.635 (16.13) 0.580 (14.73)
0.360 (9.14) 0.330 (8. General Semiconductor mosfet | | |
4 | GFP50N06 | MOSFET, Transistor Chinahaiso electronic Co.Ltd
http://www.chinahaiso.com
MOSFET GFP 50N06
GFP 50N06
FEATURES (参数) Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃)
Absolute maximum ratings Characteristics
T=25℃ unless othe Chinahaiso electronic mosfet | | |
5 | GFP5N60 | N-Channel enhancement mode power field effect Transistors GFP5N60
General Description(概述)
These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP5N60是增强型N沟道功率场效应管,采用平面条形DMOS 工艺生产制造。 This advanced technology has been especially tailored to ETC transistor | | |
6 | GFP5N60 | Field effect transistor 东莞市华索电子有限公司
http://www.chinahaiso.com
场效应晶体管 GFP 5N60
GFP 5N60
概述
GFP 5N60 是增强型 N 沟道功率场效应管,采用平面条形 DMOS 工艺生产制造。
GFP5N60 具有低导通电阻、优越的开关特性以及抗雪崩击 穿能力,适合用� Haiso transistor | | |
7 | GFP60N03 | N-Channel Enhancement-Mode MOSFET
GFP60N03
N-Channel Enhancement-Mode MOSFET
TO-220AB
0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56)
D
H C N ct E ET u R d T ENF ro P New G
®
0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14)
VDS 30V RDS(ON) 11mΩ ID 60A
D
G
*
0.155 (3.93) 0 General Semiconductor mosfet | |
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