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Número de pieza | HBC124ES6R | |
Descripción | Dual NPN Digital Transistors | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HBC124ES6R (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Dual NPN Digital Transistors
HBC124ES6R
Spec. No. : C363S6R
Issued Date : 2009.04.30
Revised Date : 2011.02.22
Page No. : 1/6
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Two DTC124E chips in a SOT-363 package.
• Mounting by SOT-323 automatic mounting machines is possible.
• Mounting cost and area can be cut in half.
• Transistor elements are independent, eliminating interference
• Complements the HBA124ES6R
• Pb-free package
Equivalent Circuit
HBC124ES6R
RBE2
RB2
TR1
RB1
RBE1
TR2
RB1=22kΩ , RB2=22 kΩ
RBE1=22kΩ , RBE2=22 kΩ
Outline
SOT-363R
HBC124ES6R
CYStek Product Specification
http://www.Datasheet4U.com
1 page CYStech Electronics Corp.
Spec. No. : C363S6R
Issued Date : 2009.04.30
Revised Date : 2011.02.22
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HBC124ES6R
CYStek Product Specification
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet HBC124ES6R.PDF ] |
Número de pieza | Descripción | Fabricantes |
HBC124ES6R | Dual NPN Digital Transistors | CYStech Electronics |
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