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HBNP54S6R PDF даташит

Спецификация HBNP54S6R изготовлена ​​​​«CYStech Electronics» и имеет функцию, называемую «General Purpose NPN PNP Epitaxial Planar Transistors(dual transistors)».

Детали детали

Номер произв HBNP54S6R
Описание General Purpose NPN PNP Epitaxial Planar Transistors(dual transistors)
Производители CYStech Electronics
логотип CYStech Electronics логотип 

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HBNP54S6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C904S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 1/9
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNP54S6R
Features
Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Pb-free lead plating package.
Equivalent Circuit
HBNP54S6R
Outline
SOT-363
Ordering Information
Device
HBNP54S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBNP54S6R
CYStek Product Specification
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HBNP54S6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C904S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
TR2 (PNP)
180 -160
160 -160
6 -6
600 -600
200(total) *1
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Note: *1 150mW per element must not be exceeded.
Characteristics (Ta=25°C)
Q1, TR1 (NPN)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
180
160
6
-
-
-
-
-
-
100
120
40
100
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.15
0.2
0.9
1.0
-
270
-
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=180V
VEB=6V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
HBNP54S6R
CYStek Product Specification









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HBNP54S6R Даташит, Описание, Даташиты
Q2, TR2 (PNP)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
-160
-160
-6
-
-
-
-
-
-
90
120
40
100
-
CYStech Electronics Corp.
Spec. No. : C904S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 3/9
Typ. Max. Unit
Test Conditions
- - V IC=-50μA
- - V IC=-1mA
- - V IE=-50μA
- -50 nA VCB=-160V
- -50 nA VEB=-6V
- -0.2 V IC=-10mA, IB=-1mA
- -0.3 V IC=-50mA, IB=-5mA
- -0.9 V IC=-10mA, IB=-1mA
- -1.0 V IC=-50mA, IB=-5mA
- - - VCE=-5V, IC=-1mA
- 270 - VCE=-5V, IC=-10mA
- - - VCE=-5V, IC=-50mA
- - MHz VCE=-30V, IC=-10mA, f=100MHz
- 6 pF VCB=-30V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Recommended Soldering Footprint
HBNP54S6R
CYStek Product Specification










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Номер в каталогеОписаниеПроизводители
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HBNP54S6RGeneral Purpose NPN PNP Epitaxial Planar Transistors(dual transistors)CYStech Electronics
CYStech Electronics

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