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Datasheet HBP1037S5 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HBP1037S5 | General Purpose PNP Epitaxial Planar Transistors(dual transistors) CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistors
Spec. No. : C306S5 Issued Date : 2011.01.07 Revised Date : Page No. : 1/6
(dual transistors)
HBP1037S5
Features
• Two BTA1037 chips in a SOT-353 package. • Mounting possible with SOT-323 automatic mounting machines. � |  CYStech Electronics | transistor |
HBP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HBP1037C6 | General Purpose PNP Epitaxial Planar Transistors CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistors
Spec. No. : C306C6 Issued Date : 2012.09.28 Revised Date : Page No. : 1/6
(dual transistors)
HBP1037C6
Features
• Two BTA1037 chips in a SOT-563 package. • Mounting possible with SOT-523 automatic mounting machines. � CYStech Electronics transistor | | |
| 2 | HBP1037S5 | General Purpose PNP Epitaxial Planar Transistors(dual transistors) CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistors
Spec. No. : C306S5 Issued Date : 2011.01.07 Revised Date : Page No. : 1/6
(dual transistors)
HBP1037S5
Features
• Two BTA1037 chips in a SOT-353 package. • Mounting possible with SOT-323 automatic mounting machines. � CYStech Electronics transistor | | |
| 3 | HBP1037S6R | General Purpose PNP Epitaxial Planar Transistors CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistors
(dual transistors)
HBP1037S6R
Spec. No. : C306S6R Issued Date : 2003.09.12 Revised Date : 2006.01.19 Page No. : 1/5
Features
• Two BTA1037 chips in a SOT-363R package. • Mounting possible with SOT-323 automatic mounting CYStech Electronics transistor | | |
| 4 | HBP1804M65 | Octuple High Voltage PNP Epitaxial Planar Transistor CYStech Electronics Corp.
Octuple High Voltage PNP Epitaxial Planar Transistor
HBP1804M65
Spec. No. : C619M65 Issued Date : 2015.10.28 Revised Date : Page No. : 1/7
Description
• High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) =-0.17V at Ic/IB =-20mA/-1mA. •  Cystech Electonics transistor | |
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