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C4747 PDF даташит

Спецификация C4747 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC4747».

Детали детали

Номер произв C4747
Описание NPN Transistor - 2SC4747
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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C4747 Даташит, Описание, Даташиты
2SC4747
Silicon NPN Triple Diffused
Application
Character display horizontal deflection output
Feature
High breakdown voltage
VCBO = 1500 V
High speed switching
tf 0.3 µs
Outline
TO-3PFM
1
2
3
1. Base
2. Collector
3. Emitter









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C4747 Даташит, Описание, Даташиты
2SC4747
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(surge)
PC*1
Tj
Tstg
Ratings
1500
800
6
10
20
50
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
800
Emitter to base breakdown
voltage
V(BR)EBO
6
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICES
hFE
VCE(sat)
Base to emitter saturation
voltage
VBE(sat)
Fall time
tf
Typ
Max
Unit
V
Test conditions
IC = 10 mA, RBE = _
—V
IE = 10 mA, IC = 0
500 µA
30
5V
VCE = 1500 V, RBE = 0
VCE = 5 V, IC = 1 A
IC = 8 A, IB = 1.6 A
1.5 V
IC = 8 A, IB = 1.6 A
0.3 µs
ICP = 7 A, IB1 = 1.4 A
2









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C4747 Даташит, Описание, Даташиты
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case Temperature TC (°C)
Area of Safe Operation
20
(100 V, 20 A)
f = 64 kHz
Ta = 25°C
16
For picture tube arcing
12
8
4 (800 V, 4 A)
0.5 mA
0 400 800 1,200 1,600 2,000
Collector to emitter Voltage VCE (V)
Typical Output Characteristics
10 2.0 A 1.8 A 1.61A.4 A
8
1.2 A
1.0 A
0.8 A
P
C = 50 W
6 0.6 A
0.4 A
4
0.2 A
2
TC = 25°C
IB = 0
0 2 4 6 8 10
Collector to emitter Voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
100 VCE = 5 V
Pulse
50
TC = 75°C
20
25°C
10 –25°C
5
2
1
0.1 0.2
0.5 1.0 2
5
Collector current IC (A)
10
2SC4747
3










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C4747NPN Transistor - 2SC4747Hitachi Semiconductor
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