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Datasheet CEP125NP-100MC Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1CEP125NP-100MCPower Inductors

SMD Power Inductor CEP125 Description • Ferrite core construction. • Magnetically shielded. • L W H: 12.9 12.9 5.6 mm Max. • Product weight: 2.7g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS × × × × Dimension - [mm] 12.5±0.4 MAX.5.6 4.0±0.2 4.2±0.2 4 . 0 ± 5
Sumida
Sumida		inductor


CEP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1CEP01N6N-Channel Enhancement Mode Field Effect Transistor

CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and cur
CET
CET		transistor
2CEP01N65N-Channel Enhancement Mode Field Effect Transistor

CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and
CET
CET		transistor
3CEP01N6GN-Channel Enhancement Mode Field Effect Transistor

CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON) 9.3Ω 9.3Ω 9.3Ω ID @VGS 1A 10V 1A 10V 1A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capabili
CET
CET		transistor
4CEP02N6N-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package

CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(
Chino-Excel Technology
Chino-Excel Technology		transistor
5CEP02N65AN-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V CEP02N65A/CEB02N65A CEF02N65A PRELIMINARY Super high dense cell design for extremely low RDS(ON). High power and c
CET
CET		transistor
6CEP02N65GN-Channel Enhancement Mode Field Effect Transistor

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65G CEB02N65G CEF02N65G VDSS 650V 650V 650V RDS(ON) 5.5Ω 5.5Ω 5.5Ω ID @VGS 2A 10V 2A 10V 2A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing ca
CET
CET		transistor
7CEP02N6AN-Channel Enhancement Mode Field Effect Transistor

CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON)
CET
CET		transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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