H5TC2G83FFR-xxL PDF даташит
Спецификация H5TC2G83FFR-xxL изготовлена «Hynix Semiconductor» и имеет функцию, называемую «2Gb DDR3L SDRAM». |
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Детали детали
Номер произв | H5TC2G83FFR-xxL |
Описание | 2Gb DDR3L SDRAM |
Производители | Hynix Semiconductor |
логотип |
30 Pages
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2Gb DDR3L SDRAM
2Gb DDR3L SDRAM
Lead-Free&Halogen-Free
(RoHS Compliant)
H5TC2G83FFR-xxA
H5TC2G83FFR-xxI
H5TC2G83FFR-xxL
H5TC2G83FFR-xxJ
H5TC2G63FFR-xxA
H5TC2G63FFR-xxI
H5TC2G63FFR-xxL
H5TC2G63FFR-xxJ
* SK Hynix reserves the right to change products or specifications without notice.
Rev. 1.0 / Nov. 2012
1
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Revision History
Revision No.
1.0
History
Official version release
Draft Date
Nov. 2012
Remark
Rev. 1.0 / Nov. 2012
2
No Preview Available ! |
Description
The H5TC2G83FFR-xxA(I,L,J) and H5TC2G63FFR-xxA(I,L,J) are a 2Gb low power Double Data Rate III
(DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large mem-
ory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides back-
ward compatibility with the 1.5V DDR3 based environment without any changes. SK Hynix 2Gb DDR3L
SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While
all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock),
data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. The data
paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
Device Features and Ordering Information
FEATURES
• VDD=VDDQ=1.35V + 0.100 / - 0.067V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 6, 7, 8, 9, 10, 11, 12 and
13
supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
• Average Refresh Cycle (Tcase of0 oC~95oC)
- 7.8 µs at 0oC ~ 85 oC
- 3.9 µs at 85oC ~ 95 oC
Commerical Temperature (0oC ~ 85 oC)
Industrial Temperature(-40oC ~ 95 oC)
• JEDEC standard 78ball FBGA(x8), 96ball FBGA(x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch
* This product in compliance with the RoHS directive.
Rev. 1.0 / Nov. 2012
3
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Номер в каталоге | Описание | Производители |
H5TC2G83FFR-xxA | 2Gb DDR3L SDRAM | Hynix Semiconductor |
H5TC2G83FFR-xxI | 2Gb DDR3L SDRAM | Hynix Semiconductor |
H5TC2G83FFR-xxJ | 2Gb DDR3L SDRAM | Hynix Semiconductor |
H5TC2G83FFR-xxL | 2Gb DDR3L SDRAM | Hynix Semiconductor |
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