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WNM2023 PDF даташит

Спецификация WNM2023 изготовлена ​​​​«TY Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв WNM2023
Описание N-Channel MOSFET
Производители TY Semiconductor
логотип TY Semiconductor логотип 

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WNM2023 Даташит, Описание, Даташиты
VDS (V)
20
Rds(on) ()
0.038@ VGS=4.5V
0.044@ VGS=2.5V
0.052@ VGS=1.8V
Descriptions
The WNM2023 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2023 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-3L
Applications
Product specification
WNM2023
Single N-Channel, 20V, 3.2A, Power MOSFET
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
3
W04*
12
W04= Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
Package
Shipping
WNM2023-3/TR SOT-23-3L 3000/Reel&Tape
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WNM2023 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
Product specification
WNM2023
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±8
3.2 2.9
2.5 2.3
0.8 0.7
0.5 0.4
2.9 2.7
2.3 2.1
0.6 0.5
0.4 0.3
10
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
125
140
150
165
60
Maximum
150
175
180
210
75
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
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WNM2023 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Product specification
WNM2023
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =16 V, VGS = 0V
VDS = 0 V, VGS = ±8V
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250uA
VGS = 4.5V, ID = 3.2A
VGS =-2.5V, ID =3.1A
VGS = 1.8V, ID = 1.5A
VDS = 5 V, ID =3.1A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz, VDS =
10 V
VGS =4.5 V, V DS =10 V,
ID = 3.1A
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 10 V,
RL=3.5 , RG=6
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 1.0A
Min
20
0.45
0.5
Typ
0.6
38
44
52
11
500
62
58
8.05
0.45
0.6
2.65
5
6
30
8
0.62
Max Unit
1
±100
V
uA
nA
1V
47
55 m
66
S
pF
nC
8
9
ns
45
12
1.5 V
http://www.twtysemi.com
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