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C4688 PDF даташит

Спецификация C4688 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC4688».

Детали детали

Номер произв C4688
Описание NPN Transistor - 2SC4688
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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C4688 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4688
Power Amplifier Applications
2SC4688
Unit: mm
Complementary to 2SA1803
Suitable for use in 40-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 5 V
Collector current
DC
IC
6
A
Pulse ICP 12
Base current
IB 0.6 A
Collector power dissipation
(Tc = 25°C)
PC 55 W
JEDEC
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-16F1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 5.8 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
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C4688 Даташит, Описание, Даташиты
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 80 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 5 V, IC = 3 A
IC = 5 A, IB = 0.5 A
VBE VCE = 5 V, IC = 3 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
2SC4688
Min Typ. Max Unit
― ― 5.0 μA
― ― 5.0 μA
80 ― ―
V
55 160
35 75
0.45 2.0
V
0.92 1.5
V
30 MHz
105
pF
C4688
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
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C4688 Даташит, Описание, Даташиты
IC – VCE
7
6 500 300 200
5
150
100
4
Common emitter
Tc = 25°C
70
50
3
30
2 20
1 IB = 10 mA
00
0 2 4 6 8 10 12 14 16
Collector-emitter voltage VCE (V)
1000
500
300
100
50
30
hFE – IC
Tc = 100°C
25
25
Common emitter
VCE = 5 V
10
5
0.01
0.03 0.1 0.3
1
Collector current IC (A)
3
10
2SC4688
IC – VBE
6
Common emitter
5 VCE = 5 V
4
Tc = 100°C
3
25
2
25
1
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Base-emitter voltage VBE (V)
1
Common emitter
0.5 IC/IB = 10
0.3
VCE (sat) – IC
Tc = 100°C
0.1
0.05
0.03
25
25
0.01
0.01
0.03 0.1 0.3
1
Collector current IC (A)
3
10
fT – IC
200
Common emitter
100 VCE = 5 V
Tc = 25°C
50
30
10
5
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Safe Operating Area
20
IC max (pulsed)*
10
IC max (continuous)
1 ms*
10 ms*
5 100 ms*
3
DC operation
(Tc = 25°C)
1
0.5
*: Single nonrepetitive pulse
0.3 Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
1 3 10
VCEO
max
30 100
Collector-emitter voltage VCE (V)
200
3
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2006-11-10










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