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8N80C PDF даташит

Спецификация 8N80C изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «FQP8N80C».

Детали детали

Номер произв 8N80C
Описание FQP8N80C
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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8N80C Даташит, Описание, Даташиты
December 2013
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU
N-Channel QFET® MOSFET
800 V, 8.0 A, 1.55
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V,
ID = 4.0 A
• Low Gate Charge (Typ. 35 nC)
• Low Crss (Typ. 13 pF)
• 100% Avalanche Tested
D
GDS
TO-220 GDS
D
G
TO-220F
S
G
TO-220F
Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQP8N80C FQPF8N80C
800
8 8*
5.1 5.1 *
32 32 *
± 30
850
8
17.8
4.5
178 59
1.43 0.48
-55 to +150
300
S
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP8N80C
0.89
0.5
62.5
FQPF8N80C
2.66
--
62.5
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
1
www.fairchildsemi.com









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8N80C Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FQP8N80C
FQPF8N80C
FQPF8N80CYDTU
Top Mark
FQP8N80C
FQPF8N80C
FQPF8N80C
Package
TO-220
TO-220F
TO-220F
(Y-formed)
Packing Method
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
--
0.5
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4 A
VDS = 50 V, ID = 4 A
(Note 4)
3.0
--
--
--
1.29
5.6
5.0
1.55
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1580 2050
-- 135 175
-- 13 17
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 8 A,
RG = 25
-- 40 90
-- 110 230
-- 65 140
(Note 4, 5)
--
70
150
VDS = 640 V, ID = 8 A,
VGS = 10 V
(Note 4, 5)
--
--
--
35
10
14
45
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- --
8
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- --
32
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 8 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
690
8.2
--
--
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 25 mH, IAS = 8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 8 A, di/dt 200 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Pulse test : pulse-width 300 µs, duty cycle 2%.
5. Essentially independent of operating temperature.
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
2
www.fairchildsemi.com









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8N80C Даташит, Описание, Даташиты
 !    
Top : 15.V0GVS
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
100
Notes :
1. 250μ s Pulse Test
10-1 2. TC = 25
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5
VGS = 10V
2.0 VGS = 20V
1.5
Note : TJ = 25
1.0
0 4 8 12 16 20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2500
2000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1500
1000
500
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
V25DS0μ=
50V
s Pulse
Test
4 68
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
V25GS0μ=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 8A
0
0 10 20 30 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
3
www.fairchildsemi.com










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