|
|
PDF C6012 Data sheet ( Hoja de datos )
| Número de pieza | C6012 | |
| Descripción | NPN Transistor - 2SC6012 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de C6012 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
Power Transistors
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide safe oeration area
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VEBO
IB
IC
ICP
PC
Tj
Tstg
1 700
1 700
7
3
15
24
60
3
150
−55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
A
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
5˚
3.0±0.3
5˚
(4.0)
2.0±0.2
5˚
5˚
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open) *
Forward voltage *
Collector-base cutoff current (Emitter open)
VEBO
VF
ICBO
Forward current transfer ratio *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transition frequency
Storage time
Fall time
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
IE = 750 mA, IC = 0
IF = 7.0 A
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VCE = 5 V, IC = 7.0 A
IC = 7.0 A, IB = 1.75 A
IC = 7.0 A, IB = 1.75 A
VCE = 10 V, IC = 0.5 A, f = 0.5 MHz
IC = 7.0 A, Resistance loaded
IB1 = 1.75 A, IB2 = −3.5 A
7V
−2 V
50 µA
1 mA
7 12
3.0 V
1.5 V
2.1 MHz
5.0 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: July 2004
SJD00321AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C6012.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| C6010 | NPN Transistor - 2SC6010 |  Toshiba |
| C6011 | NPN Transistor - 2SC6011 |  Allegro |
| C6012 | NPN Transistor - 2SC6012 | Panasonic Semiconductor |
| C6017 | NPN Transistor - 2SC6017 |  Sanyo Semicon Device |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |