NSM80100MT1G PDF даташит
Спецификация NSM80100MT1G изготовлена «ON Semiconductor» и имеет функцию, называемую «PNP Transistor». |
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Детали детали
Номер произв | NSM80100MT1G |
Описание | PNP Transistor |
Производители | ON Semiconductor |
логотип |
6 Pages
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NSM80100MT1G
PNP Transistor with Dual
Series Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD Control Board
• High Speed Switching
• High Voltage Switching
MAXIMUM RATINGS − PNP TRANSISTOR
Rating
Symbol
Collector −Emitter Voltage
VCEO
Collector −Base Voltage
VCBO
Emitter −Base Voltage
VEBO
Collector Current − Continuous
IC
MAXIMUM RATINGS − SWITCHING DIODE
Value
−80
−80
−4.0
−500
Unit
Vdc
Vdc
Vdc
mAdc
Rating
Reverse Voltage
Forward Current
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t < 1 sec
t = 1 msec
Operating and Storage Junction
Temperature Range
Symbol
VR
IF
IFSM
TJ, Tstg
Value
100
200
1.0
20
−55 to +150
Unit
V
mA
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ESD RATINGS
Rating
Electrostatic Discharge
HBM
MM
Class
3A
M4
Value
4000 V ≤ Failure < 8000 V
Failure > 400 V
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR−5 Board,
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance from
Junction−to−Ambient (Note 1)
Total Device Dissipation FR−5 Board
(Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−5 = 650 mm2 pad, 2.0 oz Cu.
2. FR−5 = 10 mm2 pad, 2.0 oz Cu.
Symbol
PD
RqJA
Max
400
313
Unit
mW
mW/°C
°C/W
PD
RqJA
270 mW
mW/°C
463 °C/W
TJ, Tstg −55 to +150
°C
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 3
1
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PNP Transistor with Dual Series
Switching Diode
65
D1
D2
4
Q1
123
654
1 23
SC−74
CASE 318F
MARKING DIAGRAM
3PN MG
G
3PN = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSM80100MT1G SC−74
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSM80100M/D
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NSM80100MT1G
Q1: PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mA, IB = 0)
Emitter −Base Breakdown Voltage
(IE = −100 mA, IC = 0)
Collector Cutoff Current
(VCE = −60 V, IB = 0)
Collector Cutoff Current
(VCB = −80 V, IE = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −10 mA, VCE = −1.0 V)
Collector −Emitter Saturation Voltage
(IC = −100 mA, IB = −10 mA)
Base −Emitter Saturation Voltage
(IC = −100 mA, VCE = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = −100 mA, VCE = −2.0 V, f = 100 MHz)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
hFE
VCE(sat)
VBE(sat)
fT
Min Max
−80
−4.0
−
−
−
−
−0.1
−0.1
120 −
− −0.25
− −1.2
150 −
Unit
V
V
mA
mA
−
V
V
MHz
D1, D2: SWITCHING DIODE (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V(BR)
75 −
V
Reverse Voltage Leakage Current
(VR = 75 V)
(VR = 20 V, TJ = 150°C)
(VR = 75 V, TJ = 150°C)
IR
mA
− 1.0
− 30
− 100
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
pF
− 1.5
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
mV
− 715
− 855
− 1000
− 1250
Reverse Recovery Time
(IF = IR = 10 mA, iR(REC) = 1.0 mA, RL = 100 W)
trr
− 4.0
ns
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
VFR
− 1.75
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NSM80100MT1G
TYPICAL CHARACTERISTICS
200
VCE = -2.0 V
TJ = 25°C
100
70
50
100
70 TJ = 25°C
50 Cibo
30
20
30
20
-2.0 -3.0 -5.0 -7.0 -10
-20 -30 -50 -70 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 1. Current−Gain — Bandwidth Product
10
7.0
5.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
Cobo
-50 -100
1.0 k
700
500
ts
300
200
100
70
50
30
VCC = -40 V
IC/IB = 10
20 IB1 = IB2
TJ = 25°C
10
-5.0 -7.0 -10
td @ VBE(off) = -0.5 V
-20 -30 -50 -70 -100
tf
tr
-200 -300
IC, COLLECTOR CURRENT (mA)
Figure 3. Switching Time
-500
400
TJ = 125°C
200
25°C
VCE = -1.0 V
-55°C
100
80
60
40
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 4. DC Current Gain
-500
1
IC/IB = 10
0.1
25°C
150°C
−55°C
0.01
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 5. Collector Emitter Saturation Voltage
vs. Collector Current
1
1.1
1.0 IC/IB = 10
0.9
0.8 −55°C
0.7
0.6 25°C
0.5
0.4 150°C
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
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NSM80100MT1G | PNP Transistor | ON Semiconductor |
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