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NVD5414N PDF даташит

Спецификация NVD5414N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVD5414N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVD5414N Даташит, Описание, Даташиты
NTD5414N, NVD5414N
Power MOSFET
24 Amps, 60 Volts Single NChannel
DPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC Q101 Qualified NVD5414N
These Devices are PbFree and are RoHS Compliant
Applications
LED Lighting and LED Backlight Drivers
DCDC Converters
DC Motor Drivers
Power Supplies Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage Continuous
GatetoSource Voltage Nonrepetitive
(TP < 10 ms)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
$20
$30
24
16
55
75
55 to
+175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 V, IL(pk) = 24 A,
L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8from Case for 10 Seconds
IS 24
EAS 86.4
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoCase (Drain) Steady State
(Note 1)
RqJC
RqJA
2.7 °C/W
58.6
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
37 mW @ 10 V
ID MAX
(Note 1)
24 A
NChannel
D
G
S
12
3
MARKING
DIAGRAMS
4
Drain
4 DPAK
CASE 369AA
STYLE 2
1
Gate
2
Drain
3
Source
5414N
Y
WW
G
= Device Code
= Year
= Work Week
= PbFree Device
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 1
1
Publication Order Number:
NTD5414N/D









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NVD5414N Даташит, Описание, Даташиты
NTD5414N, NVD5414N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage Temper-
ature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VDS = 0 V, ID = 250 mA
60
67.3
V
mV/°C
Zero Gate Voltage Drain Current
GateBody Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V
VDS = 60 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = $20 V
1.0
50
$100
mA
nA
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250 mA
2.0 3.2 4.0
V
Negative Threshold Temperature Coefficient
VGS(th)/TJ
0.74 mV/°C
DraintoSource OnVoltage
VDS(on)
VGS = 10 V, ID = 24 A
0.7 1.16
V
VGS = 10 V, ID = 12 A, 150°C
0.7
DraintoSource OnResistance
RDS(on)
VGS = 10 V, ID = 24 A
28.4 37 mW
Forward Transconductance
gFS VDS = 15 V, ID = 20 A
24 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V, VDS = 48 V,
ID = 24 A
VGS = 10 V, VDD = 48 V,
ID = 24 A, RG = 9.1 W
800 1200
165
75
25 48
1.1
4.8
11.3
pF
nC
12 ns
58
47
69
Forward Diode Voltage (Note 2)
VSD
VGS = 0 V
IS = 24 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
Charge Time
trr
ta
IS = 24 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
Discharge Time
tb
Reverse Recovery Stored Charge
QRR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
0.92 1.15
0.8
45.7
31.7
14
76
V
ns
nC
ORDERING INFORMATION
Device
Package
Shipping
NTD5414NT4G
DPAK
(PbFree)
2500 / Tape & Reel
NVD5414NT4G
DPAK
(PbFree)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2









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NVD5414N Даташит, Описание, Даташиты
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
40
10 V
35
7V
30
6V
TJ = 25°C
5.5 V
25
20
5V
15
4.8 V
10
5 4.5 V
0 VGS = 4.2 V
0123 45
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
40
35 VDS 10 V
30
25
20
15 TJ = 125°C
10
TJ = 25°C
5
0 TJ = 55°C
234 5
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.08
0.07
ID = 24 A
TJ = 25°C
0.06
0.05
0.04
0.03
0.02
5 6 7 8 9 10
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
2.5
ID = 24 A
VGS = 10 V
2.0
0.040
TJ = 25°C
0.030
VGS = 10 V
0.020
0.010
10 15 20 25 30 35 40 45
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1000
VGS = 0 V
TJ = 150°C
1.5 100
TJ = 125°C
1.0
0.5
50 25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
10
5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
vs. Voltage
http://onsemi.com
3










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