NTD5414NT4G PDF даташит
Спецификация NTD5414NT4G изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
|
Детали детали
Номер произв | NTD5414NT4G |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
No Preview Available ! |
NTD5414N, NVD5414N
Power MOSFET
24 Amps, 60 Volts Single N−Channel
DPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• AEC Q101 Qualified − NVD5414N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• LED Lighting and LED Backlight Drivers
• DC−DC Converters
• DC Motor Drivers
• Power Supplies Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
$20
$30
24
16
55
75
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 V, IL(pk) = 24 A,
L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 24
EAS 86.4
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
(Note 1)
RqJC
RqJA
2.7 °C/W
58.6
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
37 mW @ 10 V
ID MAX
(Note 1)
24 A
N−Channel
D
G
S
12
3
MARKING
DIAGRAMS
4
Drain
4 DPAK
CASE 369AA
STYLE 2
1
Gate
2
Drain
3
Source
5414N
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Device
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
1
Publication Order Number:
NTD5414N/D
No Preview Available ! |
NTD5414N, NVD5414N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VDS = 0 V, ID = 250 mA
60
67.3
V
mV/°C
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V
VDS = 60 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = $20 V
1.0
50
$100
mA
nA
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250 mA
2.0 3.2 4.0
V
Negative Threshold Temperature Coefficient
VGS(th)/TJ
0.74 mV/°C
Drain−to−Source On−Voltage
VDS(on)
VGS = 10 V, ID = 24 A
0.7 1.16
V
VGS = 10 V, ID = 12 A, 150°C
0.7
Drain−to−Source On−Resistance
RDS(on)
VGS = 10 V, ID = 24 A
28.4 37 mW
Forward Transconductance
gFS VDS = 15 V, ID = 20 A
24 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V, VDS = 48 V,
ID = 24 A
VGS = 10 V, VDD = 48 V,
ID = 24 A, RG = 9.1 W
800 1200
165
75
25 48
1.1
4.8
11.3
pF
nC
12 ns
58
47
69
Forward Diode Voltage (Note 2)
VSD
VGS = 0 V
IS = 24 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
Charge Time
trr
ta
IS = 24 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
Discharge Time
tb
Reverse Recovery Stored Charge
QRR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
0.92 1.15
0.8
45.7
31.7
14
76
V
ns
nC
ORDERING INFORMATION
Device
Package
Shipping†
NTD5414NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD5414NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
No Preview Available ! |
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
40
10 V
35
7V
30
6V
TJ = 25°C
5.5 V
25
20
5V
15
4.8 V
10
5 4.5 V
0 VGS = 4.2 V
0123 45
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
40
35 VDS ≥ 10 V
30
25
20
15 TJ = 125°C
10
TJ = 25°C
5
0 TJ = −55°C
234 5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.08
0.07
ID = 24 A
TJ = 25°C
0.06
0.05
0.04
0.03
0.02
5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
ID = 24 A
VGS = 10 V
2.0
0.040
TJ = 25°C
0.030
VGS = 10 V
0.020
0.010
10 15 20 25 30 35 40 45
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
VGS = 0 V
TJ = 150°C
1.5 100
TJ = 125°C
1.0
0.5
−50 −25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
Скачать PDF:
[ NTD5414NT4G.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NTD5414NT4G | Power MOSFET ( Transistor ) | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |