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PDF NTMFS4C09NT3G Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4C09NT3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4C09N
Power MOSFET
30 V, 52 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 80°C
VDSS
VGS
ID
30
±20
16.4
12.3
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 25°C
TA = 80°C
PD
ID
2.51 W
25.3 A
19.0
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
PD
ID
6.0 W
9.0 A
6.8
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =80°C
PD
ID
0.76 W
52 A
39
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
25.5 W
146 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 29 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDmax
TTSJT,G
IS
dV/dt
EAS
TL
80
−55 to
+150
23
7.0
42
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 20 Apk, EAS = 20 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.8 mW @ 10 V
8.5 mW @ 4.5 V
D (5−8)
ID MAX
52 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4C09N
S AYWZZ
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
ORDERING INFORMATION
Device
NTMFS4C09NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4C09NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 2
1
Publication Order Number:
NTMFS4C09N/D
1 page  
NTMFS4C09N
TYPICAL CHARACTERISTICS
10
QT
8
6
4 QGS
QGD
VGS = 10 V
2
VDD = 15 V
ID = 30 A
TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20 22 24
QG, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16
14
12
TJ = 125°C
TJ = 25°C
10
8
6
4
2
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
VGS = 10 V
VDD = 15 V
ID = 15 A
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
1000
0 V < VGS < 10 V
100
10 ms
10 100 ms
1 ms
1 10 ms
0.1
0.01
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.1 1
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
20
18 ID = 20 A
16
14
12
10
8
6
4
2
0
25 50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40 45 50
ID (A)
Figure 12. GFS vs. ID
http://onsemi.com
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| PDF Descargar | [ Datasheet NTMFS4C09NT3G.PDF ] | |
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