NTMFS5830NL PDF даташит
Спецификация NTMFS5830NL изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMFS5830NL |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTMFS5830NL
Power MOSFET
40 V, 172 A, 2.3 mW
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 70°C
VDSS
VGS
ID
40
±20
28
22
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TA = 25°C
TA = 70°C
TC = 25°C
TC = 70°C
PD
ID
3.2
2.0
172
138
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TC = 70°C
tp = 10 ms
PD
IDM
125
80
690
Unit
V
V
A
W
A
W
A
Operating Junction and Storage Temperature TJ, TSTG −55 to
+150
°C
Source Current (Body Diode)
IS 172 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 85 Apk, L = 0.1 mH, RG = 25 W)
EAS
361 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
RqJC
1.0
Junction−to−Ambient Steady State (Note 1)
RqJA
39 °C/W
Junction−to−Ambient Steady State (Note 2)
RqJA
73
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] inclusing traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
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V(BR)DSS
40 V
RDS(ON) MAX
2.3 mW @ 10 V
3.6 mW @ 4.5 V
D (5)
ID MAX
172 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 5830NL
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS5830NLT1G DFN5 1500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 2
1
Publication Order Number:
NTMFS5830NL/D
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NTMFS5830NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 40 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 20 A
VGS = 4.5 V
ID = 20 A
VDS = 5 V, ID = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGP
RG
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 10 V, VDS = 32 V; ID = 60 A
VGS = 4.5 V, VDS = 32 V; ID = 60 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 20 V,
ID = 10 A, RG = 2.5 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta
tb
VGS
=
0
V, dIS/dt
IS = 60
=
A
100
A/ms,
Reverse Recovery Charge
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
40
1.0
Typ Max Unit
V
32 mV/°C
1
100
±100
mA
nA
3.0 V
7.2 mV/°C
1.7 2.3
2.6 3.6 mW
38 S
5880
750
500
113
5.5
19.5
32
3.6
0.5
pF
nC
V
W
22
32
40 ns
27
0.74 1.0
0.58
41
19
19
33
V
ns
nC
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NTMFS5830NL
TYPICAL CHARACTERISTICS
350
10 V
300
250
200
150
5.5 V 4.4 V
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
100 VGS = 3.2 V
50
0 TJ = 25°C
012345
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
350
VDS ≥ 10 V
300
250
200
150
100 TJ = 25°C
50 TJ = 125°C
0
2
TJ = −55°C
3
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
5
0.010
0.008
0.006
ID = 20 A
TJ = 25°C
0.0035
TJ = 25°C
0.0030
0.0025
VGS = 4.5 V
0.004
0.002
0.0020
0.0015
VGS = 10 V
0.000
0 2 4 6 8 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.0010
0
25 50 75 100 125 150 175
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
VGS = 10 V
1.8 ID = 20 A
100000
VGS = 0 V
1.6
1.4 TJ = 150°C
10000
1.2
1.0 TJ = 125°C
0.8
0.6 1000
−50 −25 0
25 50 75 100 125 150
10
20
30
40
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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