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PDF NTMFS5830NLT1G Data sheet ( Hoja de datos )
| Número de pieza | NTMFS5830NLT1G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS5830NL
Power MOSFET
40 V, 172 A, 2.3 mW
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 70°C
VDSS
VGS
ID
40
±20
28
22
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TA = 25°C
TA = 70°C
TC = 25°C
TC = 70°C
PD
ID
3.2
2.0
172
138
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TC = 70°C
tp = 10 ms
PD
IDM
125
80
690
Unit
V
V
A
W
A
W
A
Operating Junction and Storage Temperature TJ, TSTG −55 to
+150
°C
Source Current (Body Diode)
IS 172 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 85 Apk, L = 0.1 mH, RG = 25 W)
EAS
361 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
RqJC
1.0
Junction−to−Ambient Steady State (Note 1)
RqJA
39 °C/W
Junction−to−Ambient Steady State (Note 2)
RqJA
73
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] inclusing traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
2.3 mW @ 10 V
3.6 mW @ 4.5 V
D (5)
ID MAX
172 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 5830NL
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS5830NLT1G DFN5 1500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 2
1
Publication Order Number:
NTMFS5830NL/D
1 page  
NTMFS5830NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 12. Thermal Response
1
10 100 1000
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTMFS5830NLT1G.PDF ] | |
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