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PDF C1627 Data sheet ( Hoja de datos )
| Número de pieza | C1627 | |
| Descripción | NPN Transistor - 2SC1627 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1627
Driver Stage Amplifier Applications
Voltage Amplifier Applications
2SC1627
Unit: mm
· Complementary to 2SA817
· Driver stage application of 20 to 25 watts amplifiers.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
80
80
5
300
60
600
150
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 5 mA, IB = 0
hFE (1)
VCE = 2 V, IC = 50 mA
(Note)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 2 V, IC = 200 mA
IC = 200 mA, IB = 10 mA
VCE = 2 V, IC = 5 mA
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
80 ¾ ¾
V
70 ¾ 240
40 ¾ ¾
¾ ¾ 0.5 V
0.55 ¾
0.8
V
¾ 100 ¾ MHz
¾ 10 ¾ pF
1 2003-03-24
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C1627.PDF ] | |
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