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2SJ655 Datasheet Download - Sanyo Semicon Device

Номер произв 2SJ655
Описание P-Channel Silicon MOSFET
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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2SJ655 Даташит, Описание, Даташиты
Ordering number : ENN7712
2SJ655
P-Channel Silicon MOSFET
2SJ655 General-Purpose Switching Device
Applications
Features
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : J655
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=--1mA, VGS=0
VDS=--100V, VGS=0
VGS= ±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--6A
ID=--6A, VGS=--10V
ID=--6A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
Ratings
--100
±20
--12
--48
2.0
25
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
--100
--1.2
9
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
13 S
100 136 m
136 190 m
2090
pF
155 pF
108 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61504QB TS IM TA-3854 No.7712-1/4







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2SJ655 Даташит, Описание, Даташиты
2SJ655
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--12A
VDS=--50V, VGS=--10V, ID=--12A
VDS=--50V, VGS=--10V, ID=--12A
IS=--12A, VGS=0
Ratings
min typ max
Unit
17 ns
95 ns
187 ns
95 ns
41 nC
7 nC
9 nC
--0.88
--1.2 V
Package Dimensions
unit : mm
2063A
10.0
3.2
4.5
2.8
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --50V
ID= --6A
RL=8.33
D VOUT
2SJ655
P.G 50S
--25
Tc=25°C
--20
ID -- VDS
--4V
--15
--10
VGS=--3V
--5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT05374
--25
VDS= --10V
--20
ID -- VGS
--15
--10
--5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT05375
No.7712-2/4







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2SJ655 Даташит, Описание, Даташиты
2SJ655
RDS(on) -- VGS
300
ID= --6V
250
250
200
200
150
150 Tc=75°C
25°C
100
100
--25°C
50
50
RDS(on) -- Tc
I DI=D-=-6-A-6,AV, GVSG=S-=-4-V-10V
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT05376
yfs-- ID
100
7 VDS= --10V
5
3
2
10
7
5
25°C Tc= --25°C
75°C
3
2
1.0
7
5
--0.1
1000
7
5
3
2
23
5 7 --1.0
23 5
Drain Current, ID -- A
SW Time -- ID
7 --10
2
IT05378
VDD= --50V
VGS= --10V
td(off)
100 tf
7 tr
5
3
2 td(on)
10
--0.1
23
--10
VDS= --50V
--9 ID= --12A
5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
VGS -- Qg
--8
23
IT05380
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25 30 35 40 45
Total Gate Charge, Qg -- nC
IT05382
0
--50
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.3
5
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IT05377
IF -- VSD
VGS=0
--0.6
--0.9
--1.2
Diode Forward Voltage, VSD -- V IT05379
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
1000
7
5
3
2 Coss
Crss
100
7
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V
ASO
--100
7
5
IDP= --48A
3 ID= --12A
2
<10µs
1001µ0sµs
--10 1ms
7
5
3
2
--1.0
Operation in this area
is limited by RDS(on).
DC op1e0r0a1mt0imosns
7
5
IT05381
3
2 Tc=25°C
--0.1 Single pulse
--1.0 2 3
5 7 --10
23
5 7 --100
2
Drain-to-Source Voltage, VDS -- V IT05383
No.7712-3/4










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