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What is EMH7020-00FF10NRR?

This electronic component, produced by the manufacturer "Elite Semiconductor", performs the same function as "500KHz PWM Synchronous Boost Converter".


EMH7020-00FF10NRR Datasheet PDF - Elite Semiconductor

Part Number EMH7020-00FF10NRR
Description 500KHz PWM Synchronous Boost Converter
Manufacturers Elite Semiconductor 
Logo Elite Semiconductor Logo 


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ESMT/EMP
EMH7020
500mA, 500KHz PWM Synchronous Boost Converter
with Output Isolated During Shutdown
General Description
The EMH7020 is a high efficiency, synchronous fixed
frequency, current-mode step-up DC/DC converter.
During shutdown mode, the output is completely
isolated from the input without drawing any battery
current. The fixed 500KHz switching frequency obtains
maximum efficiency up to 96% and uses only a few
external components.
With 180loading, the minimum start-up voltage can
be as low as 0.93V, provided by a one or two-cell
alkaline or one-cell Li-Lon battery.
The features of EMH7020 include current limit, low
battery comparator, open-drain power good output,
short circuit, and thermal shutdown protection. The
EMH7020 is also available in 3X3mm TDFN-10 and
E-MSOP-8L package.
Applications
Mobile Phone
Digital Still Cameras
Portable applications
MP3 Players
GPS Receivers
Features
Up to 96% efficiency
Reference voltage: 0.5V
Output to input disconnect at shutdown mode
500mA current delivery
Switch current limit protection
500KHz fixed switching frequency
Thermal shutdown protection
0.5V Low-battery comparator
Min-start up voltage: 0.93V
Low quiescent current: 50uA (Tpy.)
Low shutdown current < 1uA
TDFN 3x3mm 10 pins and E-MSOP 8 pins
package
Typical Application
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Jun. 2012
Revision: 1.2
1/15

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EMH7020-00FF10NRR equivalent
ESMT/EMP
EMH7020
Note 1: Absolute maximum ratings indicate limits beyond which damage may occur.
Note 2: All voltages are in respect to the potential of the ground pin.
Note 3: θJA is measured in the natural convection at TA=25on a highly effective thermal conductivity test board (2
layers, 2S0P).
Note 4: θJC represents the thermal resistance between the chip and the top of the package case.
Note 5: Maximum power dissipation for the device is calculated using the following equation:
PD
TJ(MAX)
θJA
-
TA
Where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θ JA is the
junction-to-ambient thermal resistance. For example, for the TDFN-10 packageθJA = 110°C/W, TJ (MAX) =
150°C and using TA = 25°C, the maximum power dissipation is 1.136W. The derating factor (-1/θJA) =
-9.09mW/°C. Below 25°C the power dissipation figure can be increased by 9.09mW per degree and similarly
decreased by this factor for temperatures above 25°C.
Note 6: Typical values represent the most typical parametric norm.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Jun. 2012
Revision: 1.2
5/15


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Featured Datasheets

Part NumberDescriptionMFRS
EMH7020-00FF10NRRThe function is 500KHz PWM Synchronous Boost Converter. Elite SemiconductorElite Semiconductor

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