NCE55H12 PDF даташит
Спецификация NCE55H12 изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE55H12 |
Описание | N-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
7 Pages
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Pb Free Product
NCE55H12
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE55H12 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =55V,ID =120A
RDS(ON) < 5.5mΩ @ VGS=10V
(Typ:4.1mΩ)
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE55H12
NCE55H12
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
55
±20
120
85
420
200
1.33
1100
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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NCE55H12
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.75 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
55 65
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=55V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23 4V
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VGS=10V, ID=40A
VDS=25V,ID=40A
- 4.1 5.5 mΩ
50 - - S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 4900 -
- 470 -
PF
PF
Crss
- 460 -
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 20 - nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
VDD=30V,ID=2A VGS=10V,RGEN=2.5Ω
-
-
19
70
-
-
nS
nS
tf - 30 - nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30V,ID=30A,
VGS=10V
- 125 -
- 24 -
- 49 -
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
- - 1.2 V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS - - 120 A
trr
Qrr
Tj=25℃,IF=75A,di/dt=100A/μs (Note3)
-
-
37
58
-
-
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=28V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1)EAS test Circuits
Pb Free Product
NCE55H12
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталоге | Описание | Производители |
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