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APM9946K Datasheet Download - Anpec Electronics Coropration

Номер произв APM9946K
Описание Dual N-Channel Enhancement Mode MOSFET
Производители Anpec Electronics Coropration
логотип Anpec Electronics Coropration логотип 



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APM9946K Даташит, Описание, Даташиты
APM9946K
Dual N-Channel Enhancement Mode MOSFET
Features
60V/5A,
R
DS(ON)
=38m(Typ.)
@
V
GS
=
10V
R
DS(ON)
=55m(Typ.)
@
V
GS
=
4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management in DC/DC Converter,
DC/AC Inverter Systems.
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
Top View of SOP 8
(8) (7)
D1 D1
(6) (5)
D2 D2
(2) (4)
G1 G2
S1 S2
(1) (3)
N-Channel MOSFET
Ordering and Marking Information
APM9946
APM9946 K :
Assembly Material
Handling Code
Temperature Range
Package Code
APM9946
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Mar., 2009
1
www.anpec.com.tw







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APM9946K Даташит, Описание, Даташиты
APM9946K
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note : *Surface Mounted on 1in2 pad area, t 10 sec.
VGS=10V
TA=25°C
TA=100°C
Rating
60
±25
5
20
2.5
150
-55 to 150
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
APM9946K
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
Gate Charge Characteristics b
VGS=0V, IDS=250µA
VDS=48V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=5A
VGS=4.5V, IDS=4A
ISD=2A, VGS=0V
60
-
-
1
-
-
-
-
--
-1
- 30
23
- ±100
38 52
55 75
0.8 1.1
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=5A
- 19 27
- 3.6 -
-5-
Unit
V
µA
V
nA
m
V
nC
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Mar., 2009
2
www.anpec.com.tw







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APM9946K Даташит, Описание, Даташиты
APM9946K
Electrical Characteristics (Cont.)
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics b
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=30V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V, RL=30,
IDS=1A, VGEN=10V,
RG=6
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=5A, dISD/dt=100A/µs
Note a : Pulse test ; pulse width 300µs, duty cycle 2%.
Note b : Guaranteed by design, not subject to production testing.
APM9946K
Min. Typ. Max.
- 1.1 -
- 970 -
- 70 -
- 45 -
- 9 17
- 8 15
- 25 46
- 5 10
- 24 -
- 26 -
Unit
pF
ns
ns
nC
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Mar., 2009
3
www.anpec.com.tw










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