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AP3988P-HF Datasheet Download - Advanced Power Electronics

Номер произв AP3988P-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 



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AP3988P-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP3988P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
D BVDSS
600V
Fast Switching Characteristic
RDS(ON)
0.75
Simple Drive Requirement
G
ID
RoHS Compliant & Halogen-Free
S
10A
Description
AP3988 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. It
provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching design and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+30
10
5
36
125
2
40
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
1
62
Unit
/W
/W
1
201301021







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AP3988P-HF Даташит, Описание, Даташиты
AP3988P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=4.5A
VDS=VGS, ID=250uA
VDS=10V, ID=4.5A
VDS=480V, VGS=0V
VGS=+30V, VDS=0V
ID=4.5A
VDS=480V
VGS=10V
VDD=300V
ID=4.5A
RG=10Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
600 -
-
- - 0.75
2-4
- 7.5 -
- - 25
- - +100
- 54 86
- 10 -
- 24 -
- 17
-
- 17
-
- 88
-
- 25 -
- 2100 3360
- 200 -
- 15 -
- 2.6 5.2
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=4.5A, VGS=0V
IS=4.5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 430 - ns
- 6.7 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=9A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2







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AP3988P-HF Даташит, Описание, Даташиты
16
T C =25 o C
12
8
4
10V
8.0V
7.0V
6.0V
V G =5.0V
0
0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.3
1.2
1.1
1
0.9
0.8
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
8
T j = 150 o C
T j = 25 o C
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP3988P-HF
12
T C =150 o C
10
8
10V
8.0V
7.0V
6.0V
V G =5.0V
6
4
2
0
0 4 8 12 16 20 24 28 32
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.2
I D =4.5A
2.8 V G =10V
2.4
2
1.6
1.2
0.8
0.4
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3










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