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AP3988I-HF Datasheet Download - Advanced Power Electronics

Номер произв AP3988I-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 



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AP3988I-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
AP3988I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
600V
RDS(ON)
0.75Ω
ID 9A
S
Description
AP3988 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching, ruggedized design and cost-effectiveness.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
600
+30
9
5
36
36.7
40
-55 to 150
-55 to 150
Value
3.4
65
Units
V
V
A
A
A
W
mJ
Units
/W
/W
Data & specifications subject to change without notice
1
200909241







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AP3988I-HF Даташит, Описание, Даташиты
AP3988I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=4.5A
VDS=VGS, ID=250uA
VDS=10V, ID=4.5A
VDS=480V, VGS=0V
VGS=+30V, VDS=0V
ID=4.5A
VDS=480V
VGS=10V
VDD=300V
ID=4.5A
RG=10Ω,VGS=10V
RD=66.7Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
600 - - V
- - 0.75 Ω
2 - 4V
- 7.5 -
S
- - 25 uA
- - +100 nA
- 54 86 nC
- 10 - nC
- 24 - nC
- 17 - ns
- 17 - ns
- 88 - ns
- 25 - ns
- 2100 3360 pF
- 200 - pF
- 15 - pF
- 2.6 -
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
IS=4.5A, VGS=0V
IS=4.5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 430 - ns
- 6.7 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=9A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2







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AP3988I-HF Даташит, Описание, Даташиты
16
T C =25 o C
12
10V
8.0V
7.0V
6.0V
8
V G =5.0V
4
0
0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
8
T j = 150 o C
6
T j = 25 o C
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP3988I-HF
12
T C =150 o C
10
8
10V
8.0V
7.0V
6.0V
V G =5.0V
6
4
2
0
0 8 16 24 32
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =4.5A
V G =10V
2
1
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3










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