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SC1405CTS PDF даташит

Спецификация SC1405CTS изготовлена ​​​​«Semtech Corporation» и имеет функцию, называемую «High Speed Synchronous Power MOSFET Smart Driver».

Детали детали

Номер произв SC1405CTS
Описание High Speed Synchronous Power MOSFET Smart Driver
Производители Semtech Corporation
логотип Semtech Corporation логотип 

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SC1405CTS Даташит, Описание, Даташиты
SC1405CTS
High Speed Synchronous Power
MOS.ET Smart Driver
POWER MANAGEMENT
Description
.eatures
The SC1405CTS is a Dual-MOS.ET Driver with an inter-
nal Overlap Protection Circuit to prevent shoot-through.
Each driver is capable of driving a 3000p. load in 15ns
rise/fall time and has ULTRA-LOW propagation delay from
input transition to the gate of the power .ET’s. Adaptive
Overlap Protection circuit ensures that the synchronous
.ET does not turn on until the top .ET source has reached
a voltage low enough to prevent shoot-through. The de-
lay between the bottom gate going low to the top gate
transitioning high is externally programmable via a ca-
pacitor to minimize dead time. The bottom .ET may be
disabled at light loads by keeping S_MOD low to trigger
asynchronous operation, thus saving the bottom .ET’s
gate drive current and inductor ripple current. An inter-
nal voltage reference allows threshold adjustment for
an Output Over-Voltage protection circuitry, independent
of the PWM controller. The device provides overvoltage
protection independant of the PWM feedback loop with
a unique “adaptive OVP” comparator which rejects noise
but responds quickly to a true OVP situation.
Under-Voltage-Lock-Out circuit is included to guarantee
that both driver outputs are off when Vcc is less than or
equal to 4.4V (typ) at supply ramp up (4.35V at supply
ramp down). A CMOS output provides status indication
of the 5V supply. A low enable input places the IC in stand-
by mode, reducing supply current to less than 10µA.
SC1405CTS is offered in a high pitch (.025” lead spac-
ing) TSSOP package.
Typical Application Circuit
K .ast rise and fall times (15ns with 3000pf load)
K 14ns max. Propagation delay (BG going with low)
K Adaptive and programmable shoot-through
protection
K Adaptive overvoltage protection
K Wide input voltage range (4.5-25V)
K Programmable delay between MOS.ET’s
K Power saving asynchronous mode control
K Output overvoltage protection/overtemp shutdown
K Under-Voltage lock-out and power ready signal
K Less than 10µA stand-by current (EN=low)
K Power ready output signal
K High frequency (to 1.2MHz) operation allows use of
small inductors and low cost caps in place of
electrolytics
Applications
K High Density/.ast transient microprocessor power
supplies
K Motor Drives/Class-D amps
K High efficiency portable computers
+V_5
+ V_IN
PW M
Controller
SSCC11440055
SSmmaartrt
MMOOSSFFEETT
DDrirviveerr
Lo ++VVCCCC__CCPPUU__CCOORREE
0.925V-2.0V
Co Up to 14A
VVIIDD [[44::00]]
SSCC11440066GG
IMIMVVPP
CCOONNTTRROOLLLLEERR
LDO
Controller
LDO
Controller
3.3V
3.3V
1.5V
2.5A
++VVCCCC__CCPPUU__IIOO
2.5V
150mA
++VVCCCC__CCPPUU__CCLLKK
Revision 1, April 2001
1
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SC1405CTS Даташит, Описание, Даташиты
SC1405CTS
POWER MANAGEMENT
Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied.
Parameter
Symbol
Conditions
Minimum Maximum Units
VCC Supply Voltage
BST to PGND
BST to DRN
DRN to PGND
DRN to PGND
OVP_S to PGND
EN, CO, DSPS, MODE, PRDY,
DELAY to AGND
VCCMAX
VMAXBST-PGND
VMAXBST-DRN
VMAXDRN-PGN
VMAXDRN-PGN
VMAXOVP S-PGND
DC
Transient, 100nS
-0.3 7 V
-0.3 30 V
-0.3 7 V
-2 25 V
-4 25 V
-0.3 10 V
-0.3
VCC + 0.3
V
AGND to PGND
-1 +1 V
Continuous Power Dissipation
Thermal Impedance Junction to Case
Pd Tamb = 25°C, TJ = 125°C
Tcase = 25°C, TJ = 125°C
θJC
0.66
2.56
40 °C/W
Thermal Impedance Junction to
Ambient
θJA
150 °C/W
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering) 10 Sec.
NOTE:
(1) Specification refers to application circuit.
TJ
TSTG
TLEAD
0
+125
°C
-65
+150
°C
300 °C
Electrical Characteristics - DC Operating Specifications
Unless specified: -0 < θJ < 125°C; VCC = 5V; 4V < VBST < 26V
Parameter
Symbol
Conditions
Min
Power Supply
Supply Voltage
Quiescent Current
VCC
Iq_stby
EN = 0V
4.5
Quiescent Current, operating
PRDY
High Level Output Voltage
Low Level Output Voltage
Iq_op
VCC = 5V, CO = 0V
VOH VCC = 4.6V, lload = 10mA
VOL
VCC < UVLO threshold,
lload = 10µA
4.5
2001 Semtech Corp.
2
Typ
5
1
4.55
0.1
Max Units
6.0 V
10 µA
mA
V
0.2 V
www.semtech.com









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SC1405CTS Даташит, Описание, Даташиты
SC1405CTS
POWER MANAGEMENT
Electrical Characteristics - DC Operating Specifications
Parameter
DSPS_DR
High Level Output Voltage
Low Level Output Voltage
Under Voltage Lockout
Start Threshold
Hysteresis
Logic Active Threshold
Overvoltage Protection
Trip Threshold
Hysteresis
Trip Delay, 50mV Overdrive
Trip Delay, 100mV
Overdrive
S_MOD
High Level Input Voltage
Low Level Input Voltage
Enable
High Level Input Voltage
Low Level Input Voltage
CO
High Level Input Voltage
Low Level Input Voltage
Thermal Shutdown
Over Temperature Trip Point
Hysteresis
High-Side Driver
Peak Output Current
Output Resistance
Symbol
VOH
VOL
Vhys
VTRIP
VhysOVP
VIH
VIL
VIH
VIL
VIH
VIL
TOTP
THYST
IPKH
RsrcTG
Low-Side Drive
Peak Output Current
Output Resistance
RsinkTG
IPKL
RsrcBG
RsinkBG
Conditions
VCC = 4.6V, Cload = 100pF
VCC = 4.6V, Cload = 100pF
EN is low
t = 0 to 125oC
t = 0 to 125oC
duty cycle < 2%, tpw < 100µs,
TJ = 125°C, VBST - VDRN = 4.5V,
VTG = 4.0V (src)+VDRN
or VTG = 0.5V (sink)+VDRN
duty cycle < 2%, tpw < 100µs,
TJ = 125°C,
VV S = 4.6V,
VBG = 4V (src)
or VLOWDR = 0.5V (sink)
Min
Typ
Max
Units
4.15
0.05
V
V
4.2 4.4
4.6
0.05
1.5
1.145
300
125
1.2
0.8
470
225
1.255
800
400
V
V
V
V
V
ns
ns
2.0
0.8
2.0
0.8
2.0
0.8
165
10
3
1
.7
3
1.2
V
V
V
V
V
V
oC
oC
A
A
1.0
2001 Semtech Corp.
3
www.semtech.com










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Номер в каталогеОписаниеПроизводители
SC1405CTSHigh Speed Synchronous Power MOSFET Smart DriverSemtech Corporation
Semtech Corporation

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