|
|
PDF NE23300 Data sheet ( Hoja de datos )
| Número de pieza | NE23300 | |
| Descripción | SUPER LOW NOISE HJ FET | |
| Fabricantes | California Eastern | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NE23300 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
SUPER LOW NOISE HJ FET
(SPACE QUALIFIED)
NE23300
FEATURES
• VERY LOW NOISE FIGURE:
0.75 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3 µm
• GATE WIDTH: 280 µm
DESCRIPTION
The NE23300 is a Hetero-Junction FET chip that utilizes the
junction between Si-doped AlGaAs and undoped InGaAs to
create a two-dimensional electron gas layer with very high
electron mobility. Its excellent low noise figure and high asso-
ciated gain make it suitable for space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
4.5
4.0
GA
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1
10
Frequency, f (GHz)
22
20
18
NF
16
14
12
10
8
6
40
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NFOPT1
GA1
P1dB
G1dB
IDSS
VP
gm
IGSO
RTH(CH-C)2
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
Saturated Drain Current, VDS = 2 V, VGS = 0 V
Pinch-off Voltage, VDS = 2 V, ID = 100 µA
Transconductance, VDS = 2 V, ID = 10 mA
Gate to Source Leakage Current, VGS = -5 V
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
µA
°C/W
MIN
10.0
15
-2.0
45
NE23300
00 (Chip)
TYP
0.35
0.75
15.0
10.5
11.2
12.0
11.8
12.8
40
-0.8
70
0.5
MAX
1.0
80
-0.2
10
260
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for
10 samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
1 page  
NE23300 LINEAR MODEL
SCHEMATIC 0.1- 26 GHz
LG
G
CIN
RG
GGS
CDG
+
VC CGS CDC
_
RI
RD LD
D
G (f) VC
RDS
CDS
COUT
RS
°C LS
S
Element
Name
VDS = 2 V, 0.1 < f < 26 GHz
Element Value
Units
Cin
Lg
Ls
Ld
Cout
CDS
CDG
CGS
CDC
f
T
RI
RS
RDS
CGS
G(f, Vc)
10 mA
0.376
1.138
209
0.222
0.078
0.098
19.544
8.309
12.998
0.001
0.028
0.043
0.000
0.084
427.446
3.226
20 mA
0.506
0.911
162
0.235
0.100
pF
nH
nH
nH
pF
pF
pF
S
pF
GHz
ps
Ohms
Ohms
Ohms
pF
S
CHIP DIMENSIONS (TA = 25°C)
NE23300 (CHIP)
400
120 56
66
56 D D
NE23300
350
G
S
G 61
S
88
Chip Thickness: 140 µm typical
45 31 47 25
13
Notes:
1. S-Parameters include Bond Wires:
Gate: Total 2 wires, 1 per bond pad 0.0129" (327 µm) long, each wire.
Drain: Total 2 wires, 1 per bond pad 0.0118" (300 µm) long, each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180 µm) each wire.
Wire: 0.0007" (17.8 µm) dia. gold.
2. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -9/98
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet NE23300.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NE23300 | SUPER LOW NOISE HJ FET | California Eastern |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |