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NE24283B PDF даташит

Спецификация NE24283B изготовлена ​​​​«California Eastern» и имеет функцию, называемую «ULTRA LOW NOISE PSEUDOMORPHIC HJ FET».

Детали детали

Номер произв NE24283B
Описание ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Производители California Eastern
логотип California Eastern логотип 

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NE24283B Даташит, Описание, Даташиты
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET NE24283B
(SPACE QUALIFIED)
FEATURES
• VERY LOW NOISE FIGURE:
0.6 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN:
11.0 dB TYP at 12 GHz
GATE LENGTH: 0.25 µm
• GATE WIDTH: 200 µm
• HERMETIC METAL/CERAMIC PACKAGE
DESCRIPTION
The NE24283B is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in a solder sealed
hermetic, metal ceramic package for high reliability in space
applications.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
1.4 24
1.2
GA
1
21
18
0.8 15
NF
0.6 12
0.4 9
0.2 6
0
1
10
Frequency, f (GHz)
3
20 30
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
NE24283B
83B
MIN TYP MAX
NFOPT1
Optimum Noise Figure at VDS = 2 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
dB
dB
0.35
0.6 0.7
GA1 Associated Gain at VDS = 2 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
dB
dB 10.0
16.0
11.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dBm
dBm
9.5
11.0
G1dB
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dB 11.8
dB 12.8
IDSS Saturated Drain Current at VDS = 2 V, VGS = 0 V
mA 15
40 70
VP Pinch-off Voltage at VDS = 2 V, IDS = 100 µA
V -2.0
-0.8 -0.2
gm Transconductance at VDS = 2 V, IDS = 10 mA
mS 45
60
IGSO
Gate to Source Leakage Current at VGS = -3 V
µA
0.5 10
RTH (CH-A) Thermal Resistance (Channel-to-Ambient)
°C/W
750
RTH (CH-C) Thermal Resistance (Channel-to-Case)
°C/W
350
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established of the production
line as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
California Eastern Laboratories









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NE24283B Даташит, Описание, Даташиты
NE24283B
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS Drain to Source Voltage
V
4.0
VGSO Gate to Source Voltage
V
–3.0
IDS Drain Current
mA IDSS
IGRF Gate Current
µA 100
TCH Channel Temperature °C 175
TSTG
Storage Temperature
°C -65 to +175
PT Total Power Dissipation mW
165
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage.
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 2 V, IDS = 10 mA
FREQ.
(GHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
1 0.30 22.0 0.88 13 0.33
2 0.31 19.0 0.82 30 0.31
4 0.35 16.0 0.73 57 0.26
6 0.38 14.0 0.67 83 0.20
8 0.43 12.5 0.63 105 0.13
10 0.50 11.5 0.57 128 0.09
12 0.60 11.0 0.52 156 0.06
14 0.71 10.3 0.46 -176 0.05
16 0.85 9.8 0.40 -155 0.04
18 1.00 9.2 0.36 -134 0.04
20 1.20 9.0 0.33 -109 0.05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
Infinite
Heat Sink
100
Free Air
50
0
0 25 50 75 100 125 150 175 200
Ambient Temperature, TA (°C)
NOISE FIGURE AND
ASSOCIATED GAIN vs. DRAIN CURRENT
VDS = 2 V, f = 12 GHz
1.4 14
1.2 13
1
NF
0.8
0.6
12
11
GA
10
0.4 9
0.2
0
0
8
7
5 10 15 20 25 30 35
Drain Current, IDS (mA)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS 0 V
50
40
-0.2 V
30
-0.4 V
20
-0.6 V
10
0 1 2 34 5
Drain to Source Voltage, VDS (V)
TRANSCONDUCTANCE AND DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
VDS = 2 V
100
80
60
40
20
0
0 5 10 15 20 25 30 35 40 45 50
Gate to Source Voltage, VGS (V)









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NE24283B Даташит, Описание, Даташиты
NE24283B
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
j1.0
j0.5
j2.0
120˚
90˚
60˚
j0.2 18 GHz
18 GHz
j5.0
150˚
30˚
0.0 0.0 0.2
-j0.2
-j0.5
0.5 1.0
-j1.0
2.0 5.0 S11
S22 0.1 GHz
0.1 GHz
-j5.0
180˚ S21
S12 .02 .04 .06 .08
0.1 GHz 0.1 GHz
10
2
18 GHz
4
-180˚
-30˚
6
-j2.0 Coordinates in Ohms
Frequency in GHz
(VDS = 3 V, IDS = 20 mA)
-120˚
8 18 GHz
-60˚
-90˚
NE24283B
VDS = 3 V, IDS = 20 mA
FREQUENCY
S11
GHz
MAG
ANG
0.10
0.20
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
10.50
11.00
1.50
12.00
12.50
13.00
13.50
14.00
14.50
15.00
15.50
16.00
16.50
17.00
17.50
18.00
0.999
0.999
0.998
0.989
0.976
0.960
0.940
0.920
0.900
0.878
0.852
0.828
0.806
0.784
0.769
0.753
0.739
0.728
0.710
0.692
0.675
0.661
0.644
0.623
0.604
0.586
0.573
0.559
0.547
0.535
0.524
0.511
0.498
0.481
0.463
0.445
0.425
0.409
-1.9
-3.8
-9.5
-18.8
-27.8
-36.7
-45.3
-53.6
-61.6
-69.7
-77.4
-84.5
-91.6
-97.9
-104.3
-110.3
-115.8
-121.3
-126.7
-131.7
-136.3
-141.0
-146.5
-152.1
-158.0
-163.6
-169.2
-174.9
179.7
174.7
169.8
164.4
158.6
152.4
145.9
138.9
131.8
125.1
S21
MAG
ANG
5.596
5.570
5.550
5.497
5.405
5.304
5.188
5.048
4.899
4.749
4.580
4.411
4.255
4.150
4.022
3.883
3.757
3.644
3.537
3.448
3.391
3.319
3.269
3.209
3.161
3.101
3.047
2.992
2.936
2.880
2.832
2.806
2.777
2.752
2.727
2.702
2.663
2.602
177.8
176.0
170.2
160.9
151.8
142.9
134.1
125.6
117.3
109.2
101.4
93.6
86.3
79.4
72.2
65.3
58.5
52.0
45.6
39.3
32.9
26.8
20.4
13.7
7.2
0.9
-5.6
-12.3
-19.0
-25.7
-32.5
-39.2
-46.2
-53.4
-60.9
-68.8
-76.5
-84.2
S12
MAG
ANG
0.001
0.002
0.005
0.010
0.015
0.021
0.025
0.030
0.033
0.037
0.041
0.043
0.046
0.048
0.051
0.053
0.055
0.055
0.059
0.062
0.064
0.066
0.067
0.071
0.073
0.076
0.078
0.079
0.081
0.083
0.085
0.088
0.091
0.093
0.097
0.099
0.102
0.102
89.7
88.4
86.5
78.0
73.2
68.7
62.7
57.7
53.4
48.8
44.7
40.0
37.6
33.7
29.6
26.3
23.2
20.9
18.4
15.5
11.5
8.7
5.6
2.8
-1.7
-4.7
-8.6
-12.4
-16.3
-20.9
-24.6
-29.1
-33.8
-39.6
-45.5
-50.9
-56.6
-63.8
S22
MAG
ANG
0.494
0.493
0.493
0.490
0.485
0.482
0.477
0.471
0.466
0.459
0.452
0.444
0.438
0.430
0.425
0.423
0.425
0.428
0.432
0.435
0.436
0.437
0.435
0.431
0.428
0.426
0.432
0.441
0.452
0.467
0.480
0.490
0.497
0.500
0.505
0.512
0.525
0.546
-1.1
-2.7
-6.7
-13.3
-19.8
-26.1
-32.4
-38.5
-44.5
-50.2
-55.9
-61.7
-67.6
-73.9
-79.9
-85.9
-91.8
-97.1
-102.4
-107.3
-112.1
-116.9
-122.4
-128.6
-135.3
-142.6
-150.2
-157.5
-164.1
-170.1
-175.8
178.1
171.4
164.1
155.8
146.7
137.7
129.4
K
0.134
0.066
0.043
0.170
0.243
0.290
0.376
0.430
0.491
0.547
0.612
0.698
0.741
0.801
0.829
0.869
0.899
0.945
0.950
0.974
1.010
1.035
1.075
1.085
1.115
1.124
1.125
1.139
1.135
1.130
1.122
1.102
1.088
1.098
1.082
1.080
1.064
1.069
MAG1
(dB)
37.479
34.448
30.453
27.401
25.567
24.024
23.171
22.260
21.716
21.084
20.481
20.111
19.661
19.368
18.969
18.649
18.345
18.212
17.778
17.452
16.621
15.875
15.214
14.778
14.301
13.963
13.764
13.520
13.358
13.209
13.102
13.090
13.040
12.804
12.738
12.639
12.621
12.461
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | | 2 - |S11| 2 - |S22| 2 , = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain










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Номер в каталогеОписаниеПроизводители
NE24283BULTRA LOW NOISE PSEUDOMORPHIC HJ FETCalifornia Eastern
California Eastern

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