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SEMiX151GAL12Vs PDF даташит

Спецификация SEMiX151GAL12Vs изготовлена ​​​​«Semikron International» и имеет функцию, называемую «IGBT Modules».

Детали детали

Номер произв SEMiX151GAL12Vs
Описание IGBT Modules
Производители Semikron International
логотип Semikron International логотип 

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SEMiX151GAL12Vs Даташит, Описание, Даташиты
SEMiX151GAL12Vs
SEMiX® 1s
SEMiX151GAL12Vs
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 720 V
VGE 15 V
VCES 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Tterminal = 80 °C
Visol AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
231
176
150
450
-20 ... 20
10
-40 ... 175
189
141
150
450
900
-40 ... 175
189
141
150
450
900
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.75 2.2 V
2.2 2.5 V
0.94 1.04 V
0.88 0.98 V
5.4 7.7 m
8.8 10.1 m
5.5 6 6.5 V
0.1 0.3 mA
mA
9.0 nF
0.89 nF
0.88 nF
1650
nC
5.00
GAL
© by SEMIKRON
Rev. 0 – 11.07.2011
1









No Preview Available !

SEMiX151GAL12Vs Даташит, Описание, Даташиты
SEMiX151GAL12Vs
SEMiX® 1s
SEMiX151GAL12Vs
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Characteristics
Symbol Conditions
td(on)
tr
Eon
td(off)
tf
Eoff
VCC = 600 V
Tj = 150 °C
IC = 150 A
VGE = ±15 V
RG on = 1
RG off = 1
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 4600 A/µs Tj = 150 °C
di/dtoff = 1700 A/µs
du/dtoff = 6700 V/ Tj = 150 °C
µs
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 150 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 4400 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 150 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 4400 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip TC = 25 °C
TC = 125 °C
Rth(c-s)
per module
Ms to heat sink (M5)
Mt to terminals (M6)
min.
1.1
0.7
4.3
7.0
1.1
0.7
4.3
7.0
3
2.5
typ.
319
46
19.4
482
68
17.1
2.1
2.1
1.3
0.9
5.6
7.8
175
27.5
11.5
2.1
2.1
1.3
0.9
5.6
7.8
175
27.5
11.5
16
0.7
1
0.075
max.
0.19
2.46
2.4
1.5
1.1
6.4
8.5
0.31
2.46
2.4
1.5
1.1
6.4
8.5
0.31
5
5
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
145
493 ± 5%
3550
±2%
Unit
ns
ns
mJ
ns
ns
mJ
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g
K
GAL
2
Rev. 0 – 11.07.2011
© by SEMIKRON









No Preview Available !

SEMiX151GAL12Vs Даташит, Описание, Даташиты
SEMiX151GAL12Vs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Fig. 6: Typ. gate charge characteristic
Rev. 0 – 11.07.2011
3










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Номер в каталогеОписаниеПроизводители
SEMiX151GAL12VsIGBT ModulesSemikron International
Semikron International

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