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PDF SEMiX223GD12E4c Data sheet ( Hoja de datos )
| Número de pieza | SEMiX223GD12E4c | |
| Descripción | Trench IGBT Modules | |
| Fabricantes | Semikron International | |
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SEMiX223GD12E4c
SEMiX® 33c
Trench IGBT Modules
SEMiX223GD12E4c
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 75 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 9 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 225 A
Tj = 150 °C
Tj = 150 °C
RG on = 1.5 Ω
RG off = 1.5 Ω
Tj = 150 °C
Tj = 150 °C
di/dton = 3630 A/µs Tj = 150 °C
di/dtoff = 2235 A/µs Tj = 150 °C
per IGBT
Values
1200
333
256
225
675
-20 ... 20
10
-40 ... 175
270
202
225
675
1161
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.85
2.25
0.8
0.7
4.7
6.9
5.8
0.1
13.2
0.87
0.71
1275
3.33
213
60
22
535
113
31.4
max. Unit
2.1
2.45
0.9
0.8
5.3
7.3
6.5
0.3
0.135
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GD
© by SEMIKRON
Rev. 2 – 16.12.2009
1
1 page  
SEMiX223GD12E4c
SEMiX 33c
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 2 – 16.12.2009
5
5 Page | ||
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| PDF Descargar | [ Datasheet SEMiX223GD12E4c.PDF ] | |
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