DataSheet.es    


PDF SEMiX603GB12Vs Data sheet ( Hoja de datos )

Número de pieza SEMiX603GB12Vs
Descripción IGBT Modules
Fabricantes Semikron International 
Logotipo Semikron International Logotipo



Hay una vista previa y un enlace de descarga de SEMiX603GB12Vs (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! SEMiX603GB12Vs Hoja de datos, Descripción, Manual

SEMiX603GB12Vs
SEMiX® 3s
SEMiX603GB12Vs
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 0.5
RGoff,main = 0.5
RG,X = 2.2
RE,X = 0.5
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 720 V
VGE 15 V
VCES 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 24 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 600 A
VGE = ±15 V
RG on = 1.4
RG off = 1.4
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 6400 A/µs Tj = 150 °C
di/dtoff = 5000 A/µs
du/dtoff = 6800 V/ Tj = 150 °C
µs
per IGBT
Values
1200
800
609
600
1800
-20 ... 20
10
-40 ... 175
516
385
600
1800
2430
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.85 2.3 V
2.2 2.65 V
0.94 1.04 V
0.88 0.98 V
1.5 2.1 m
2.2 2.8 m
5.5 6 6.5 V
0.1 0.3 mA
mA
36.0 nF
3.55 nF
3.53 nF
6600
nC
1.25
515 ns
92 ns
50 mJ
705 ns
75 ns
83 mJ
0.057 K/W
GB
© by SEMIKRON
Rev. 1 – 03.08.2011
1

1 page




SEMiX603GB12Vs pdf
SEMiX603GB12Vs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 03.08.2011
5

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet SEMiX603GB12Vs.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SEMiX603GB12VsIGBT ModulesSemikron International
Semikron International

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar