SEMIX71GD12E4S PDF даташит
Спецификация SEMIX71GD12E4S изготовлена «Semikron International» и имеет функцию, называемую «IGBT Modules». |
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Детали детали
Номер произв | SEMIX71GD12E4S |
Описание | IGBT Modules |
Производители | Semikron International |
логотип |
5 Pages
No Preview Available ! |
SEMiX71GD12E4s
SEMiX®13
Trench IGBT Modules
SEMiX71GD12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 75 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 3 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 75 A
Tj = 150 °C
Tj = 150 °C
RG on = 1 Ω
RG off = 1 Ω
Tj = 150 °C
Tj = 150 °C
di/dton = 2500 A/µs Tj = 150 °C
di/dtoff = 930 A/µs Tj = 150 °C
per IGBT
Values
1200
115
88
75
225
-20 ... 20
10
-40 ... 175
97
73
75
225
429
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.85
2.25
0.8
0.7
14.0
20.7
5.8
0.1
4.4
0.29
0.24
425
10.00
160
35
7.5
433
79
9
max. Unit
2.1
2.45
0.9
0.8
16.0
22.0
6.5
0.3
0.38
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GD
© by SEMIKRON
Rev. 1 – 20.02.2009
1
No Preview Available ! |
SEMiX71GD12E4s
SEMiX®13
Trench IGBT Modules
SEMiX71GD12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 75 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF Tj = 25 °C
Tj = 150 °C
IRRM
Qrr
Err
IF = 75 A
Tj = 150 °C
di/dtoff = 2700 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min. typ. max. Unit
2.2 2.49 V
2.1 2.4 V
1.1
0.7
10.7
14.0
1.3
0.9
11.6
16.1
95
13
1.5 V
1.1 V
13.2 mΩ
17.6 mΩ
A
µC
5.3 mJ
0.58 K/W
20 nH
0.7 mΩ
1 mΩ
0.04 K/W
3 5 Nm
2.5 5 Nm
Nm
350 g
493 ± 5%
3550
±2%
Ω
K
GD
2
Rev. 1 – 20.02.2009
© by SEMIKRON
No Preview Available ! |
SEMiX71GD12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Fig. 6: Typ. gate charge characteristic
Rev. 1 – 20.02.2009
3
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SEMIX71GD12E4S | IGBT Modules | Semikron International |
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