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NSS60200LT1G PDF даташит

Спецификация NSS60200LT1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «60V 4.0A Low VCE - sat PNP Transistor».

Детали детали

Номер произв NSS60200LT1G
Описание 60V 4.0A Low VCE - sat PNP Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSS60200LT1G Даташит, Описание, Даташиты
NSS60200LT1G
60 V, 4.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Collector Current Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
60
80
7.0
2.0
4.0
Vdc
Vdc
Vdc
A
A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460 mW
3.7 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540 mW
4.3 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 2)
230
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ 100 mm2, 1 oz. copper traces.
2. FR4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2009
August, 2009 Rev. 1
1
http://onsemi.com
60 VOLTS, 4.0 AMPS
PNEPQLUOIVWALVECNET(saRt)DTSR(oAn)N8S0ISmTWOR
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT23 (TO236)
CASE 318
STYLE 6
MARKING DIAGRAM
VG MG
G
1
VG = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NSS60200LT1G SOT23 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60200L/D









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NSS60200LT1G Даташит, Описание, Даташиты
NSS60200LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
EmitterBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.200 A)
Base Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.010 A)
Base Emitter Turnon Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
td
tr
ts
tf
Min
60
80
7.0
150
150
100
100
100
Typ Max Unit
Vdc
−−
Vdc
−−
Vdc
−−
mAdc
− −0.1
mAdc
− −0.1
300
0.017
0.095
0.180
0.170
0.030
0.120
0.270
0.220
0.900
0.850
325
62
V
V
V
MHz
pF
pF
60 ns
120 ns
400 ns
130 ns
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NSS60200LT1G Даташит, Описание, Даташиты
NSS60200LT1G
0.2
IC/IB = 10
0.15
0.1
VCE(sat) = 150°C
25°C
55°C
0.05
0
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
10
400
350 150°C (2.0 V)
300
150°C (5.0 V)
250 25°C (5.0 V)
200 25°C (2.0 V)
150 55°C (5.0 V)
100 55°C (2.0 V)
50
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
0.9 IC/IB = 100
55°C
0.8
0.7 25°C
0.6
10
0.5
0.4 150°C
0.3
0.2
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
0.50
0.45 IC/IB = 100
55°C
0.40
0.35
0.30
0.25
0.20
0.15
VCE(sat) = 150°C
25°C
0.10
0.05
0
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
IC/IB = 10
1.0
0.9 55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
VCE = 2.0 V
0.9 55°C
0.8
0.7 25°C
0.6
0.5
0.4 150°C
0.3
0.2
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter TurnOn Voltage vs.
Collector Current
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Номер в каталогеОписаниеПроизводители
NSS60200LT1G60V 4.0A Low VCE - sat PNP TransistorON Semiconductor
ON Semiconductor

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