Datasheet SDG5521C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	SDG5521C	N and P-Ch Enhancement Mode Power MOSFET SDG5521C Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.7A, -20V, RDS(ON) 77 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench	SeCoS Halbleitertechnologie	mosfet

SDG Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	SDG5521C	N and P-Ch Enhancement Mode Power MOSFET SDG5521C Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.7A, -20V, RDS(ON) 77 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench	SeCoS Halbleitertechnologie	mosfet
2	SDG8204	Dual N-Channel E nhancement Mode F ield E ffect Transistor S DG 8204 S amHop Microelectronics C orp. December , 2002 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 28 @ V G S = 4.0V 34 @ V G S = 2.5V R ugged and reli	SamHop Microelectronics Corp.	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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