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D2TO35 Datasheet Download - Vishay Siliconix

Номер произв D2TO35
Описание Surface Mount Power Resistor Thick Film Technology
Производители Vishay Siliconix
логотип Vishay Siliconix логотип 

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D2TO35 Даташит, Описание, Даташиты
www.vishay.com
D2TO35
Vishay Sfernice
Surface Mount Power Resistor
Thick Film Technology
FEATURES
AEC-Q200 qualified
• 35 W at 25 °C case temperature
• Surface mounted resistor - TO-263 (D2PAK)
style package
• Wide resistance range from 0.01 to 550 k
• Non inductive
• Resistor isolated from metal tab
• Solder reflow secure at 270 °C/10 s
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DIMENSIONS in millimeters
10.5
1.25
1.6
10.1 8.8
4.5
8.7
7.8 min.
0.2
7.6
Footprint recommendation for
solderable contact area:
11.00
1.50
4.02
6.50
8.00
4.00 2.49
2.8
2.2
1.6 5.08
0.3
2.40
0.26
Tolerance: ± 0.3 mm
2
Notes
• For the asssembly on board, we recommend the lead (Pb)-free thermal profile as per J-STD-020C
• Power dissipation is 3.3 W at an ambient temperature of 25 °C when mounted on a double sided copper board using FR4 standard, 70 μm
of copper, 39 mm x 30 mm x 1.6 mm
STANDARD ELECTRICAL SPECIFICATIONS
MODEL
SIZE
RESISTANCE
RANGE
RATED POWER
P25 °C
W
LIMITING ELEMENT
VOLTAGE UL
V
TOLERANCE
±%
TEMPERATURE
COEFFICIENT
± ppm/°C
CRITICAL
RESISTANCE
D2TO35
TO-263
0.01 to 550K
35
500
1, 2, 5, 10 150, 250, 700, 1100
7.14K
MECHANICAL SPECIFICATIONS
Mechanical Protection
Molded
Resistive Element
Thick film
Substrate
Alumina
Connections
Tinned copper
Weight
2.2 g max.
ENVIRONMENTAL SPECIFICATIONS
Temperature Range
- 55 °C to 175 °C
Flammability
IEC 60695-11-5
2 applications 30 s
separated by 60 s
TECHNICAL SPECIFICATIONS
Power Rating and
Thermal Resistance
of the Component
Temperature Coefficient
35 W at 25 °C (case
temperature)
RTH (j - c): 4.28 °C/W
See Special Feature table
Standard
± 150 ppm/°C
Dielectric Strength
IEC 60115-1
2000 VRMS - 1 min - 10 mA max.
(between terminals and board)
Insulation Resistance
106 M
Inductance
0.1 μH
DIMENSIONS
Standard Package
TO-263 style
(D2PAK)
Revision: 31-Oct-13
1 Document Number: 51058
For technical questions, contact: sferfixedresistors@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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D2TO35 Даташит, Описание, Даташиты
www.vishay.com
D2TO35
Vishay Sfernice
SPECIAL FEATURES
Resistance Values
Tolerances
Requirement Temperature Coefficient (TCR)
(- 55 °C + 150 °C)
IEC 60115-1
0.010
± 1100 ppm/°C
0.045
0.1
± 1 % at ± 10 %
± 700 ppm/°C
± 250 ppm/°C
0.5
± 150 ppm/°C
PERFORMANCE
TESTS
Momentary Overload
Load Life
High Temperature Exposure
Temperature Cycling
Moisture Resistance
Biased Humidity
Operational Life
ESD Human Body Model
Vibration
Mechanical Shock
Board Flex
Terminal Strength
CONDITIONS
IEC 60115-1 §4.13
1.7 Pr 5 s for R < 2
1.4 Pr 5 s for R 2
US < 1.5 UL
IEC 60115-1
1000 h, 90/30 Pr at + 25 °C
AEC-Q200 REV C conditions:
MIL-STD-202 method 108
1000 h, + 175 °C, unpowered
Pre-conditioning 3 reflows according
JESTD020D
IEC 60068-2-14 test Na
1000 cycles, - 55 °C, + 175 °C
Dwell time - 15 min
AEC-Q200 REV C conditions:
MIL-STD-202 method 106
10 cycles, 24 h, unpowered
AEC-Q200 REV C conditions:
MIL-STD-202 method 103
1000 h, 85 °C, 85% RH
AEC-Q200 REV C conditions:
Pre-conditioning 3 reflows according
JESTD020D
MIL-STD-202 method 108
1000 h, 90/30, powered, + 125 °C
AEC-Q200 REV C conditions:
AEC-Q200-002
25 kVAD
AEC-Q200 REV C conditions:
MIL-STD-202 method 204
5 g’s for 20 min, 12 cycles
test from 10 Hz to 2000 Hz
AEC-Q200 REV C conditions:
MIL-STD-202 method 213
100 g’s, 6 ms, 3.75 m/s
3 shocks/direction
AEC-Q200 REV C conditions:
AEC-Q200-005
bending 2 mm, 60 s
AEC-Q200 REV C conditions:
AEC-Q200-006
1.8 kgf, 60 s
REQUIREMENTS
± (0.25 % + 0.005 )
± (1 % + 0.005 )
± (0.25 % + 0.005 )
± (0.5 % + 0.005 )
± (0.5 % + 0.005 )
± (1 % + 0.005 )
± (1 % + 0.005 )
± (0.5 % + 0.005 )
± (0.5 % + 0.005 )
± (0.5 % + 0.005 )
± (0.25 % + 0.01 )
± (0.25 % + 0.01 )
ASSEMBLY SPECIFICATIONS
For the assembly on board, we recommend the lead (Pb)-free thermal profile as per J-STD-020C
TESTS
CONDITIONS
REQUIREMENTS
Resistance to Soldering Heat
IEC 60115-1
IEC 60068-2-58
Solder bath method: 270 °C/10 s
± (0.5 % + 0.005 )
Moisture Sensitivity Level (MSL)
IPC/JEDEC J-STD-020C
85 °C/85 % RH/168 h
Level: 1
+ pass requirements of TCR
overload and dielectic strength after MSL
Revision: 31-Oct-13
2 Document Number: 51058
For technical questions, contact: sferfixedresistors@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







No Preview Available !

D2TO35 Даташит, Описание, Даташиты
www.vishay.com
D2TO35
Vishay Sfernice
CHOICE OF THE BOARD
The user must choose the board according to the working conditions of the component (power, room temperature). Maximum
working temperature must not exeed 175 °C. The dissipated power is simply calculated by the following ratio:
P = -----------------------------------------------T--------------------------------------------1
RTH (j - c) + RTH (c - h) + RTH (h - a)
P: Expressed in W
T: Difference between maximum working temperature and room temperature or fluid cooling temperature
RTH (j - c): Thermal resistance value measured between resistive layer and outer side of the resistor. It is the thermal resistance
of the component: 4.28 °C/W.
RTH (c - h): Thermal resistance value measure 4.28 °C/W. Outer side of the resistor and upper side of the board. This is the
thermal resistance of the solder layer.
RTH (h - a): Thermal resistance of the board.
Example:
RTH (c - h) + RTH (h - a) for D2TO35 power rating 3.5 W at ambient temperature + 25 °C.
Thermal resistance RTH (j - c): 4.28 °C/W
Considering equation (1) we have:
T = 175 °C - 25 °C = 150 °C
RTH (j - c) + RTH (c - h) + RTH (h - a) = T/P = 150/3.5 = 42.8 °C/W
RTH (c - h) + RTH (h - a) = 42.8 °C/W - 4.28 °C/W = 38.52 °C/W
Single Pulse:
These informations are for a single pulse on a cold resistor at 25 °C (not already used for a dissipation) and for pulses of
100 ms maximum duration.
The formula used to calculate E is:
with:
E = P x t = -U-R----2- x t
E (J): Pulse energy
P (W): Pulse power
t (s): Pulse duration
U (V): Pulse voltage
R (W): Resistor
The energy calculated must be less: than that allowed by the graph.
Revision: 31-Oct-13
3 Document Number: 51058
For technical questions, contact: sferfixedresistors@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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