NE3505M04 PDF даташит
Спецификация NE3505M04 изготовлена «California Eastern Labs» и имеет функцию, называемую «HETERO JUNCTION FIELD EFFECT TRANSISITOR». |
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Детали детали
Номер произв | NE3505M04 |
Описание | HETERO JUNCTION FIELD EFFECT TRANSISITOR |
Производители | California Eastern Labs |
логотип |
20 Pages
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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3505M04
L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain :
NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz
NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz (Reference Only)
NF=0.45dB TYP. Ga=14dB TYP. @f=5.8GHz (Reference Only)
- Flat-lead 4-pin tin-type super mini-mold(M04) package
APPLICATIONS
- Satellite Radio(SDARS, DMB, etc.) antenna LNA
- 5.8GHz-band WLAN LNA
- LNA for Micro-wave communication system
ORDERING INFORMATION
PART NUMBER
Quantity
NE3505M04
50pcs (Non reel)
NE3505M04-T2 3 Kpcs/reel
Marking
Packaging Style
8 mm wide emboss taping
V76 1pin(source), 2pin(Drain) feed hole direction
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3505M04
ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )
PARAMETER
SYMBOL
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Drain Current
ID
Gate Current
IG
Total Power Dissipation
Ptot
Channel Temperature
Tch
Storage Temperature
Tstg
RATINGS
4.0
-3.0
IDSS
140
125
+125
- 65 to +125
UNIT
V
V
mA
µA
mW
°C
°C
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P*****EJ0V0PM00 (1st edition)
Date Published August 2004 CP(K)
Printed in Japan
© NEC Compound Semiconductor Devices 2004
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NE3505M04
RECOMMENDED OPERATING CONDITIONS(TA = +25 °C)
PARAMETER
SYMBOL MIN.
TYP.
Drain to Source Voltage
VDS
---
2
MAX.
2.5
Drain Current
ID --- 15 25
Input Power
Pin --- --- 0
UNIT
V
mA
dBm
ELECTRICAL CHARACTERISTICS TA = +25 °C)
PARAMETER
SYMBOL TEST CONDITIONS MIN.
Gate to Source Leak Current
IGSO
VGS=-3V
---
Saturated Drain Current
Gate to Source Cutoff Voltage
IDSS
VGS(off)
VDS=2V, VGS=0V
VDS=2V, ID=100µA
50
-0.35
Trans conductance
Noise Figure
Associated Gain
gm VDS=2V, ID=15mA
NF VDS=2V, ID=15mA
Ga f 4GHz
70
---
14
TYP.
0.5
---
---
---
0.4
15.5
MAX.
10
120
-1.5
---
0.6
---
UNIT
uA
mA
V
mS
dB
dB
The information in this document is subject to change without notice.
DATA SHEET
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TYPICAL CHARACTERISTICS TA = +25 °C)
NE3505M04
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Номер в каталоге | Описание | Производители |
NE3505M04 | HETERO JUNCTION FIELD EFFECT TRANSISITOR | California Eastern Labs |
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