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NE5531079A PDF даташит

Спецификация NE5531079A изготовлена ​​​​«California Eastern Labs» и имеет функцию, называемую «SILICON POWER MOS FET».

Детали детали

Номер произв NE5531079A
Описание SILICON POWER MOS FET
Производители California Eastern Labs
логотип California Eastern Labs логотип 

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NE5531079A Даташит, Описание, Даташиты
SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology
and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added
efficiency at 460 MHz with 7.5 V supply voltage.
FEATURES
High output power
High power added efficiency
High linear gain
Surface mount package
Single supply
: Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
: add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
: GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
: 5.7 5.7 1.1 mm MAX.
: VDS = 7.5 V MAX.
APPLICATIONS
460 MHz band radio systems
900 MHz band radio systems
ORDERING INFORMATION
Part Number
NE5531079A
Order Number
NE5531079A-A
NE5531079A-T1 NE5531079A-T1-A
NE5531079A-T1A NE5531079A-T1A-A
Package
79A (Pb-Free)
Marking
W5
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5531079A-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10752EJ01V0DS (1st edition)
Date Published April 2009 NS









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NE5531079A Даташит, Описание, Даташиты
NE5531079A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS Note 1
VGS
IDS
IDS Note 2
Ptot
Tch
Tstg
Ratings
30
6.0
3.0
6.0
35
125
55 to +125
Unit
V
V
A
A
W
C
C
Note 1. VDS will be used under 12 V on RF operation.
2. Duty Cycle 50%, Ton 1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
Test Conditions
VDS
VGS
IDS
Pin f = 460 MHz, VDS = 6.0 V
MIN.
1.15
TYP.
6.0
1.55
2.0
25
MAX.
7.5
2.05
30
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS
(TA = +25C, unless otherwise specified, using our standard test fixture)
Parameter
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Symbol
Test Conditions
IGSS VGS = 6.0 V
IDSS VDS = 25 V
Vth
Rth
gm
BVDSS
Pout
IDS
add
GL Note
VDS = 7.5 V, IDS = 1.0 mA
Channel to Case
VDS = 7.5 V, IDS = 700100 mA
IDSS = 10 A
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDset = 200 mA (RF OFF)
MIN.
0.8
2.5
25
39.0
TYP.
1.15
2.9
3.2
35
40.0
2.0
68
20.5
MAX.
100
10
Unit
nA
nA
1.55 V
 C/W
4.0 S
V
dBm
A
%
dB
Note Pin = 10 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2 Data Sheet PU10752EJ01V0DS









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NE5531079A Даташит, Описание, Даташиты
TEST CIRCUIT (f = 460 MHz)
NE5531079A
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
Value
Type
Maker
C1
1F
GRM31CR72A105KA01B
Murata
C2
1 000 pF
GRM1882C1H102JA01
Murata
C10
10 pF
GRM1882C1H100JA01
Murata
C11
24 pF
ATC100A240JW
American Technical Ceramics
C20
27 pF
ATC100A270JW
American Technical Ceramics
C21
1.8 pF
ATC100A1R8BW
American Technical Ceramics
C22
100 pF
ATC100A101JW
American Technical Ceramics
R1
4.7 k
1/8W Chip Resistor
R2
150
1/8W Chip Resistor
L1
123 nH
0.5 mm, D = 3 mm, 10 Turns
Ohesangyou
PCB
R4775, t = 0.4 mm, r = 4.5, size = 30 48 mm
Data Sheet PU10752EJ01V0DS
3










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Номер в каталогеОписаниеПроизводители
NE5531079ASILICON POWER MOS FETCalifornia Eastern Labs
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