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NE66219 PDF даташит

Спецификация NE66219 изготовлена ​​​​«California Eastern Labs» и имеет функцию, называемую «NPN SILICON RF TRANSISTOR».

Детали детали

Номер произв NE66219
Описание NPN SILICON RF TRANSISTOR
Производители California Eastern Labs
логотип California Eastern Labs логотип 

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NE66219 Даташит, Описание, Даташиты
NPN SILICON RF TRANSISTOR
NE66219 / 2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
FEATURES
Suitable for high-frequency oscillation
fT = 25 GHz technology adopted
3-pin ultra super minimold (19, 1608 PKG) package
<R> ORDERING INFORMATION
Part Number Order Number
Package
NEC66219
2SC5606
NE66219-A
2SC5606-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
NE66219-T1 NE66219-T1-A
2SC5606-T1 2SC5606-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PtotNote
Tj
Tstg
Ratings
15
3.3
1.5
35
115
150
65 to +150
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy substrate
Unit
V
V
V
mA
mW
C
C
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.









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NE66219 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO
hFENote 1
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 5 mA
fT VCE = 2 V, IC = 20 mA, f = 2 GHz
S21e2
NF
CreNote 2
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
VCB = 2 V, IE = 0 mA, f = 1 MHz
MAG Note 3 VCE = 2 V, IC = 20 mA, f = 2 GHz
MSG Note 4 VCE = 2 V, IC = 20 mA, f = 2 GHz
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MAG = S21 (K (K2 1) )
S12
4. MSG = S21
S12
hFE CLASSIFICATION
<R>
Rank
Marking
hFE
FB/YFB
UA
60 to 100
NE66219 / 2SC5606
MIN. TYP. MAX. Unit
– – 200 nA
– – 200 nA
60 80 100
21 GHz
10 12.5
dB
1.2 1.5 dB
0.21 0.3 pF
14 dB
15 dB
2 Data Sheet PU10781EJ01V0DS









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NE66219 Даташит, Описание, Даташиты
NE66219 / 2SC5606
<R> TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10781EJ01V0DS
3










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Номер в каталогеОписаниеПроизводители
NE66219NPN SILICON RF TRANSISTORCalifornia Eastern Labs
California Eastern Labs

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