NE97733 PDF даташит
Спецификация NE97733 изготовлена «California Eastern Labs» и имеет функцию, называемую «SILICON TRANSISTOR». |
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Детали детали
Номер произв | NE97733 |
Описание | SILICON TRANSISTOR |
Производители | California Eastern Labs |
логотип |
5 Pages
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NE97733SILICON TRANSISTOR
PNP SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 8.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE68133
• HIGH INSERTION POWER GAIN:
|S21E|2 = 12 dB at 1 GHz
DESCRIPTION
The NE97733 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97733 offers
excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS PARAMETERS AND CONDITIONS
fT Gain Bandwidth Product at VCE = -8 V, IC = -20 mA
UNITS
GHz
NF Noise Figure at VCE = -8 V, IC = -3 mA
dB
|S21E|2
Insertion Power Gain at VCE = -8 V, IC = -20 mA, f = 1 GHz
dB
hFE Forward Current Gain Ratio at VCE = -8 V, IC = -20 mA
ICBO Collector Cutoff Current at VCB = -10 V, IE = 0
μA
IEBO Emitter Cutoff Current at VBE = -1 V, IC = 0
μA
CRE2
Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz
pF
PT Total Power Dissipation
mW
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
MIN
6.0
8.0
20
NE97733
2SA1977
33
TYP
8.5
1.5
12.0
40
0.5
MAX
3.0
100
-0.1
-0.1
0.1
200
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NE97733
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
-20
VCEO Collector to Emitter Voltage V
-12
VEBO Emitter to Base Voltage
V
-3
IC Collector Current
mA -50
TJ
TSTG
Junction Temperature
Storage Temperature
°C 150
°C -65 to +200
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC POWER DERATING CURVES
400
FREE AIR
300
200
NE97733
100
0
0 50 100 150
Ambient Temperature, TA (°C)
200
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
VCE = -8 V
8
6
4
2
0
-1 -10
Collector Current, IC (mA)
-100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
VCE = -8V
50
40
30
20
10
5
4
3
2
1
-0.1 -1.0
-10 -100 -1000
Collector Current, IC (mA)
35
30
25
20
15
10
5
0
-5
-10
-15
0.1
INSERTION GAIN vs.
FREQUENCY
VCE = -8 V
IC = -20 mA
0.2 0.3 0.4 0.5
1.0
Frequency, f (GHz)
2.0 3.0
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = -8 V
f = 1 GHz
10
5
0
-1 -10 100
Collector Current, IC (mA)
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TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC CURRENT GAIN VS.
COLLECTOR CURRENT
100
50
40
30 VCE = -3 V
VCE = -2 V
20 VCE = -1 V
10
1.0
-0.1
-1.0 -10 -100
Collector Current, IC (mA)
-1000
NE97733
OUTPUT CAPACITANCE VS.
COLLECTOR TO BASE VOLTAGE
1.5
f = 1 MHz
1
0.5
0
-1 -10
Collector to Base Voltage, VCB (V)
-100
SWITCHING CHARACTERISTICS
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
tON (delay)
tr
tOFF (delay)
tf
Vin = 1 V
TYP
1.08
0.66
0.32
0.78
Unit
ns
ns
ns
ns
SWITCHING TIME MEASUREMENT CIRCUIT
VCC (-)
RC1
RC2
VIN
VOUT
RL2
RL1
tON (delay)
VIN RS
50 Ω
Sampling
Oscilloscope
VBB (-)
VOUT
20 ns
tr
tf tOFF (delay)
RE
VEE (+)
VIN = 1 v, VBB = -0.5 V, RC1 = RC2
RS RC
(Ω) (Ω)
RL1 RL2 RE
(Ω) (Ω) (Ω)
VEE
VCC
(V) (V)
160 1 K
200 250 2.7 K
27 26.3
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Номер в каталоге | Описание | Производители |
NE97733 | SILICON TRANSISTOR | California Eastern Labs |
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