BUK9K18-40E PDF даташит
Спецификация BUK9K18-40E изготовлена «NXP Semiconductors» и имеет функцию, называемую «Dual N-channel TrenchMOS logic level FET». |
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Детали детали
Номер произв | BUK9K18-40E |
Описание | Dual N-channel TrenchMOS logic level FET |
Производители | NXP Semiconductors |
логотип |
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BUK9K18-40E
Dual N-channel TrenchMOS logic level FET
23 April 2013
Product data sheet
1. General description
Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) > 0.5 V @ 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 12
resistance
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 10 A; VDS = 32 V; VGS = 10 V;
Tj = 25 °C; Fig. 14
Min Typ Max Unit
- - 40 V
- - 30 A
- - 38 W
- 17.1 19.5 mΩ
- 3 - nC
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NXP Semiconductors
BUK9K18-40E
Dual N-channel TrenchMOS logic level FET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 S1 source1
2 G1 gate1
3 S2 source2
4 G2 gate2
5 D2 drain2
6 D2 drain2
7 D1 drain1
8 D1 drain1
Simplified outline
8765
Graphic symbol
D1 D1
D2 D2
1234
LFPAK56D (SOT1205)
S1 G1 S2 G2
mbk725
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9K18-40E
LFPAK56D
Description
Plastic single ended surface mounted package (LFPAK56D); 8
leads
Version
SOT1205
7. Marking
Table 4. Marking codes
Type number
BUK9K18-40E
Marking code
91840E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ; Tj ≥ 25 °C; Tj ≤ 175 °C
VGS gate-source voltage
Tj ≤ 175 °C; DC
Tj ≤ 175 °C; Pulsed
ID drain current
Tmb = 25 °C; VGS = 5 V; Fig. 1
Tmb = 100 °C; VGS = 5 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
BUK9K18-40E
All information provided in this document is subject to legal disclaimers.
Product data sheet
23 April 2013
[1][2]
Min Max Unit
- 40 V
- 40 V
-10 10
V
-15 15
V
- 30 A
- 24 A
- 124 A
© NXP B.V. 2013. All rights reserved
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NXP Semiconductors
BUK9K18-40E
Dual N-channel TrenchMOS logic level FET
Symbol
Parameter
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode FET1 and FET2
IS source current
ISM peak source current
Avalanche Ruggedness FET1 and FET2
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
ID = 30 A; Vsup ≤ 40 V; VGS = 5 V;
Tj(init) = 25 °C; Fig. 3
Min
-
-55
-55
-
-
-
[3][4] -
[1] Accumulated Pulse duration up to 50 hours delivers zero defect ppm
[2] Significantly longer life times are achieved by lowering Tj and or VGS.
[3] Refer to application note AN10273 for further information
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C
40
ID
(A)
30
003aaj625
120
Pder
(%)
80
Max Unit
38 W
175 °C
175 °C
260 °C
30 A
124 A
22 mJ
03aa16
20
40
10
0
0 50 100 150 200
Tmb(°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9K18-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 April 2013
© NXP B.V. 2013. All rights reserved
3 / 13
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