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PDF BUK6213-30A Data sheet ( Hoja de datos )
| Número de pieza | BUK6213-30A | |
| Descripción | TrenchMOS Intermediate level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK6213-30A
TrenchMOS™ Intermediate level FET
Rev. 02 — 22 September 2003
M3D300
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s 175 °C rated
s Q101 compliant
s Intermediate level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 267 mJ
s ID ≤ 55 A
s RDSon = 10 mΩ (typ)
s Ptot ≤ 102 W.
2. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
3 source (s)
mb mounting base;
connected to
drain (d)
2
13
Top view
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the package.
Symbol
d
g
MBB076
s
1 page  
Philips Semiconductors
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 10 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 10 A
Qg(tot)
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 10 V; VDS = 24 V;
ID = 25 A; Figure 14
VGS = 5 V; VDS = 24 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDS = 25 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
measured from drain to
center of die
Ls internal source inductance measured from source lead
to source bond pad
BUK6213-30A
TrenchMOS™ Intermediate level FET
Min Typ Max Unit
30 - - V
27 - - V
1 1.8 3 V
0.5 - - V
- - 3.5 V
-
0.05 10
µA
- - 500 µA
- 2 100 nA
- 10 13 mΩ
- - 25 mΩ
- 15 20 mΩ
- 44 - nC
- 26 - nC
- 7 - nC
- 14 - nC
-
1 490
1 986
pF
- 505 606 pF
- 325 445 pF
- 12 - nS
- 95 - nS
- 75 - nS
- 105 - nS
- 2.5 - nH
- 7.5 - nH
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
BUK6213-30A
TrenchMOS™ Intermediate level FET
8. Revision history
Table 6: Revision history
Rev Date
CPCN
Description
02 20030922 -
Product data (9397 750 12028)
Modifications:
• Correction made to descriptive and alternative title. Text changed from ‘TrenchMOSTM
Logic level FET’ to ‘TrenchMOSTM Intermediate level FET’.
01 20030825 -
Product data (9397 750 11752)
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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