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PDF BUK752R3-40C Data sheet ( Hoja de datos )
| Número de pieza | BUK752R3-40C | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK752R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 — 26 January 2009
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Dynamic characteristics
QGD gate-drain charge
Static characteristics
RDSon drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
Conditions
Min Typ Max Unit
Tj ≥ 25 °C; Tj ≤ 175 °C
- - 40 V
VGS = 10 V; Tmb = 25 °C; [1] - - 100 A
see Figure 1; see Figure 3; [2]
Tmb = 25 °C; see Figure 2
- - 333 W
VGS = 10 V; ID = 25 A;
VDS = 32 V; see Figure 15
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
- 67 - nC
- 1.96 2.3 mΩ
ID = 100 A; Vsup ≤ 40 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 1.2 J
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.
1 page  
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
103 003aab013
IAL
(A)
102 (1)
10
1
10-3
10-2
10-1
(2)
(3)
1 10
tAL (ms)
Fig 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK752R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78A
EA
p A1
q mounting
D1 base
D
L1(1)
b1
L
L2
123
ee
b
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 c
D D1 E
e
mm
4.5 1.39 0.9
4.1 1.27 0.6
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT78A
3-lead TO-220AB
SC-46
L
15.0
13.5
L1(1)
3.30
2.79
L2
max.
3.0
pqQ
3.8 3.0 2.6
3.6 2.7 2.2
EUROPEAN
PROJECTION
ISSUE DATE
03-01-22
05-03-14
Fig 17. Package outline SOT78A (3-lead TO-220AB; SC-46; SFM3)
BUK752R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
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