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C2873 PDF даташит

Спецификация C2873 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC2873».

Детали детали

Номер произв C2873
Описание NPN Transistor - 2SC2873
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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C2873 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications
Power Switching Applications
2SC2873
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High-speed switching time: tstg = 1.0 μs (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1213
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
50
50
5
2
0.4
500
1000
150
55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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C2873 Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C)
2SC2873
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note 3)
VCE = 2 V, IC = 0.5 A
hFE (2)
VCE (sat)
VCE = 2 V, IC = 2.0 A
IC = 1 A, IB = 0.05 A
VBE (sat) IC = 1 A, IB = 0.05 A
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 0.1 μA
― ― 0.1 μA
50 ― ―
V
70 240
20 ― ―
― ― 0.5 V
― ― 1.2 V
120 MHz
30 pF
Turn-on time
Switching time
Storage time
Fall time
ton OUTPUT 0.1
20 μs INPUT IB1
tstg IB1
IB2
IB2
IB1 = IB2 = 0.05 A,
tf DUTY CYCLE 1%
1.0
μs
0.1
Note 3: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
Part No. (or abbreviation code)
M
Characteristics indicator
Lot No.
Note.4
Note 4 : A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line : [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters
such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and
electronic equipment.
2 2012-10-16









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C2873 Даташит, Описание, Даташиты
VCE – IC
1.6
Common emitter
Ta = 100°C
1.2
0.8 IB = 3 mA
5
10
20
0.4 30
40
50
0
0 0.4 0.8 1.2 1.6 2.0
Collector current IC (A)
VCE – IC
1.6
Common emitter
Ta = −55°C
1.2
0.8 IB = 5 mA
10
20 30
0.4
40
50
0
0 0.4 0.8 1.2 1.6 2.0
Collector current IC (A)
2SC2873
VCE – IC
1.6
Common emitter
Ta = 25°C
1.2
0.8 IB = 5 mA
10
20
0.4
30
40
0
0 0.4 0.8 1.2 1.6 2.0
Collector current IC (A)
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 2 V
Ta = 100°C
25
55
10
10
30
100
300
1000
3000
Collector current IC (mA)
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 20
0.3
0.1
0.05
0.03
0.01
10
Ta = 100°C
25
55
30 100 300 1000
Collector current IC (mA)
3000
VBE (sat) – IC
10
Common emitter
5 IC/IB = 20
3
1 Ta = −55°C
0.5 25
100
0.3
0.1
10
30 100 300 1000
Collector current IC (mA)
3000
3 2012-10-16










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