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HCS08HMSR PDF даташит

Спецификация HCS08HMSR изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Quad 2-Input AND Gate».

Детали детали

Номер произв HCS08HMSR
Описание Radiation Hardened Quad 2-Input AND Gate
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HCS08HMSR Даташит, Описание, Даташиты
HCS08MS
August 1995
Radiation Hardened
Quad 2-Input AND Gate
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD(Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 1012 Rads (Si)/s
• Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
A1 1
B1 2
Y1 3
A2 4
B2 5
Y2 6
GND 7
14 VCC
13 B4
12 A4
11 Y4
10 B3
9 A3
8 Y3
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCS08MS is a Radiation Hardened Quad 2-Input AND
Gate. A high on both inputs force the output to a High state.
The HCS08MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS08MS is supplied in a 14 lead Ceramic Flatpack Package
(K suffix) or a 14 lead SBDIP Package (D suffix).
Ordering Information
A1
B1
Y1
A2
B2
Y2
GND
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
1 14
2 13
3 12
4 11
5 10
69
78
VCC
B4
A4
Y4
B3
A3
Y3
TRUTH TABLE
INPUTS
An Bn
LL
OUTPUTS
Yn
L
PART
NUMBER
TEMPERATURE SCREENING
RANGE
LEVEL
PACKAGE
HCS08DMSR -55oC to +125oC Intersil Class 14 Lead SBDIP
S Equivalent
HCS08KMSR -55oC to +125oC Intersil Class 14 Lead Ceramic
S Equivalent Flatpack
HCS08D/
Sample
+25oC
Sample
14 Lead SBDIP
HCS08K/
Sample
+25oC
Sample
14 Lead Ceramic
Flatpack
HCS08HMSR
+25oC
Die
Die
LHL
HL L
HHH
NOTE: L = Logic Level Low, H = Logic level High
Functional Diagram
(1, 4, 9, 12)
An
(2, 5, 10, 13)
Bn
(3, 6, 8, 11)
Yn
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number 518746
File Number 3047.1









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HCS08HMSR Даташит, Описание, Даташиты
Specifications HCS08MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA
SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W
Ceramic Flatpack Package . . . . . . . . . . . 116oC/W
Maximum Package Power Dissipation at +125oC
θJC
24oC/W
30oC/W
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
Quiescent Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
VCC = 5.5V, VIN = VCC or
GND
Noise Immunity
Functional Test
FN VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX
- 10
- 200
4.8 -
4.0 -
-4.8 -
-4.0 -
- 0.1
- 0.1
VCC
-0.1
VCC
-0.1
-
-
-
-
-
±0.5
±5.0
-
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
-
Spec Number 518746
2









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HCS08HMSR Даташит, Описание, Даташиты
Specifications HCS08MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Input to Yn
SYMBOL
(NOTES 1, 2)
CONDITIONS
TPHL VCC = 4.5V
Input to Yn
TPLH VCC = 4.5V
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
LIMITS
MIN MAX UNITS
2 18 ns
2 20 ns
2 18 ns
2 20 ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CONDITIONS
CPD
VCC = 5.0V, f = 1MHz
Input Capacitance
CIN VCC = 5.0V, f = 1MHz
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
NOTES
1
1
1
1
1
1
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC
+25oC
+125oC
MIN MAX UNITS
- 18 pF
- 25 pF
- 10 pF
- 10 pF
- 15 ns
- 22 ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
Quiescent Current
ICC VCC = 5.5V, VIN = VCC or GND
Output Current (Sink)
IOL VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
Output Current (Source)
IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
IOL = 50µA
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
IOH = -50µA
Input Leakage Current
IIN VCC = 5.5V, VIN = VCC or GND
TEMPERATURE
+25oC
+25oC
200K RAD LIMITS
MIN MAX UNITS
- 0.2 mA
4.0 - mA
+25oC
-4.0 - mA
+25oC
- 0.1 V
+25oC
+25oC
VCC
-0.1
-
- ±5
V
µA
Spec Number 518746
3










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Номер в каталогеОписаниеПроизводители
HCS08HMSRRadiation Hardened Quad 2-Input AND GateIntersil Corporation
Intersil Corporation

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