DataSheet26.com

HCS112MS PDF даташит

Спецификация HCS112MS изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Dual JK Flip-Flop».

Детали детали

Номер произв HCS112MS
Описание Radiation Hardened Dual JK Flip-Flop
Производители Intersil Corporation
логотип Intersil Corporation логотип 

9 Pages
scroll

No Preview Available !

HCS112MS Даташит, Описание, Даташиты
HCS112MS
September 1995
Radiation Hardened
Dual JK Flip-Flop
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
CP1 1
KA 2
JA 3
SA 4
QA 5
QA 6
QB 7
GND 8
16 VCC
15 RA
14 RB
13 CPB
12 KB
11 JB
10 SB
9 QB
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCS112MS is a Radiation Hardened dual JK
flip-flop with set and reset. The output changes state on the
negative going transition of the clock pulse. Set and reset
are accomplished asynchronously by a logic low input level.
The HCS112MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
CP1
KA
JA
SA
QA
QA
QB
GND
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
VCC
RA
RB
CPB
KB
JB
SB
QB
The HCS112MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCS112DMSR
HCS112KMSR
HCS112D/Sample
HCS112K/Sample
HCS112HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
11
Spec Number 518830
File Number 3558.1









No Preview Available !

HCS112MS Даташит, Описание, Даташиты
Functional Diagram
3(11)
J
2(12)
K
4(10)
S
15(14)
R
1(13)
CP
HCS112MS
CL
P
CL N
P CL
N
CL
CL
P
CL
N
P
CL
N
CL
CL
CL
5 (9)
Q
6 (7)
Q
TRUTH TABLE
INPUTS
OUTPUTS
S R CP J K Q Q
LHXXXHL
HLXXXLH
L L X X X H* H*
HH
LL
No Change
HH
HLHL
HH
LHLH
HH
HH
Toggle
HHHXX
No Change
H = High Steady State, L = Low Steady State, X = Immaterial,
= High-to-Low Transition
* Output States Unpredictable if S and R Go High Simultaneously after Both being Low at the Same Time
Spec Number 518830
12









No Preview Available !

HCS112MS Даташит, Описание, Даташиты
Specifications HCS112MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOL
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V, (Note 2)
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIN = VCC or
GND
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V (Note 3)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages referenced to device GND.
2. Force/Measure Functions may be interchanged.
3. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX
- 20
- 400
4.8 -
4.0 -
-4.8 -
-4.0 -
- 0.1
- 0.1
VCC
-0.1
VCC
-0.1
-
-
-
±0.5
±5.0
-
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
-
Spec Number 518830
13










Скачать PDF:

[ HCS112MS.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HCS112MSRadiation Hardened Dual JK Flip-FlopIntersil Corporation
Intersil Corporation

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск