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AON6908 PDF даташит

Спецификация AON6908 изготовлена ​​​​«Alpha & Omega Semiconductors» и имеет функцию, называемую «30V Dual Asymmetric N-Channel MOSFET».

Детали детали

Номер произв AON6908
Описание 30V Dual Asymmetric N-Channel MOSFET
Производители Alpha & Omega Semiconductors
логотип Alpha & Omega Semiconductors логотип 

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AON6908 Даташит, Описание, Даташиты
AON6908
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6908 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is desgined to minimze switching
losses. The Q2 "Low Side" MOSFET is an SRFET™ that
features low RDS(ON) to reduce conduction losses as well
as an integrated Schottky diode with low QRR and Vf to
reduce switching losses. The AON6908 is well suited for
use in compact DC/DC converter applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
46A
<8.9m
<12.5m
Q2
30V
80A
<4.1m
<5.9m
Top View
DFN5X6A
Bottom View
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
46 80
ID 28 62
IDM 100 270
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
11.5
9
27
36
17
13.5
40
80
TC=25°C
Power Dissipation B TC=100°C
PD
31
12
83
33
TA=25°C
Power Dissipation A TA=70°C
PDSM
1.9
1.2
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
24
50
1
Max Q1
35
67
4
Max Q2
29
60
1.5
Units
°C/W
°C/W
°C/W
Rev 1: November 2010
www.aosmd.com
Page 1 of 12









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AON6908 Даташит, Описание, Даташиты
AON6908
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=11.5A
VGS=4.5V, ID=11.5A
Forward Transconductance
VDS=5V, ID=11.5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.3
100
1.8
7.4
11.1
10
50
0.7
1
5
100
2.4
8.9
13.4
12.5
1
34
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
680 850 1110 pF
260 380 540 pF
18 30 51 pF
0.7 1.4 2.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10 12.5 15 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=11.5A
4.6 5.7 6.9 nC
1.6 2 2.4 nC
Qgd Gate Drain Charge
1.5 2.6 3.6 nC
tD(on)
Turn-On DelayTime
5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
9.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
18.5 ns
tf Turn-Off Fall Time
4 ns
trr Body Diode Reverse Recovery Time IF=11.5A, dI/dt=500A/µs
8 10.5 13 ns
Qrr Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=500A/µs
13 17.2 21 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
www.aosmd.com
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AON6908 Даташит, Описание, Даташиты
AON6908
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
60
40
20
5V
6V
7V
4.5V
4V
3.5V
VGS=3V
80
VDS=5V
60
40
125°C
20
25°C
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
14
12
VGS=4.5V
10
8
6 VGS=10V
4
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.8
VGS=10V
1.6 ID=11.5A
1.4 17
VGS=45.5V
1.2 ID=11.25A
10
1
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Tem1p8erature
(Note E)
25
ID=11.5A
20
15
125°C
10
25°C
5
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+040 0
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 1: November 2010
www.aosmd.com
Page 3 of 12










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