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HCS241HMSR PDF даташит

Спецификация HCS241HMSR изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «Radiation Hardened Inverting Octal Three-State Buffer/Line Driver».

Детали детали

Номер произв HCS241HMSR
Описание Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HCS241HMSR Даташит, Описание, Даташиты
HCS241MS
September 1995
Radiation Hardened Inverting
Octal Three-State Buffer/Line Driver
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/Sec. 20ns Pulse
• Latch Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% VCC Max
- VIH = 70% VCC Min
• Input Compatibility Levels Ii 5µA at VOL, VOH
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
AE 1
AI1 2
BO4 3
AI2 4
BO3 5
AI3 6
BO2 7
AI4 8
BO1 9
GND 10
20 VCC
19 BE
18 AO1
17 BI4
16 AO2
15 BI3
14 AO3
13 BI2
12 AO4
11 BI1
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
Description
The Intersil HCS241MS is a Radiation Hardened inverting
octal three-state buffer/line driver with two output enables,
one active low, and one active high.
The HCS241MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS241MS is supplied in a 20 lead ceramic flatpack
(K suffix) or a SBDIP package (D suffix).
AE
AI1
BO4
AI2
BO3
AI3
BO2
AI4
BO1
GND
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
VCC
BE
AO1
BI4
AO2
BI3
AO3
BI2
AO4
BI1
Ordering Information
PART NUMBER
HCS241DMSR
HCS241KMSR
HCS241D/Sample
HCS241K/Sample
HCS241HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
302
Spec Number 518838
File Number 3122.1









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HCS241HMSR Даташит, Описание, Даташиты
HCS241MS
Functional Diagram
AO1 AO2
18 16
AO3 AO4 BO1
14 12
9
BO2
7
BO3
5
BO4
3
N PN P N PN P P N PN P N PN
1
AE
2
AI1
4
AI2
6
AI3
8
AI4
11
BI1
13
BI2
15
BI3
17
BI4
19
BE
INPUTS
AE AIn
LL
LH
HX
H = High Voltage Level
L = Low Voltage Level
X = Immaterial
Z = High Impedance
TRUTH TABLE
OUTPUT
INPUTS
AOn
BE
BIn
LLX
HH L
ZHH
OUTPUT
BOn
Z
L
H
Spec Number 518838
303









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HCS241HMSR Даташит, Описание, Даташиты
Specifications HCS241MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±35mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Gates
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
SYMBOL
CONDITIONS
GROUP
A SUB-
GROUPS
ICC VCC = 5.5V,
VIN = VCC or GND
1
2, 3
IOL VCC = VIH = 4.5V,
VOUT = 0.4V,
VIL = 0 (Note 2)
1
2, 3
IOH VCC = VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0 (Note 2)
1
2, 3
VOL
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
1, 2, 3
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
1, 2, 3
VOH
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
1, 2, 3
VCC = 5.5V, VIH = 3.85V,
VIL = 1.35V, IOH = -50µA
1, 2, 3
IIN VCC = 5.5V
VIN = VCC or GND
1
2, 3
IOZ VCC = 5.5V, Force
Voltage = 0V or VCC
1
2, 3
FN VCC = 4.5V, VIH = 3.15V, 7, 8A, 8B
VIL = 1.35V (Note 3)
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC,
-55oC
+25oC, +125oC,
-55oC
+25oC, +125oC,
-55oC
+25oC, +125oC,
-55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC,
-55oC
LIMITS
MIN MAX
- 40
- 750
7.2 -
6.0 -
-7.2 -
-6.0 -
- 0.1
- 0.1
VCC-
0.1
VCC-
0.1
-
-
-
-
-
-
-
±0.5
±5.0
±1.0
±50
-
NOTES:
1. All voltages referenced to device GND.
2. Force/Measure function may be interchanged.
3. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
UNITS
µA
mA
mA
V
V
V
V
µA
µA
-
Spec Number 518838
304










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Номер в каталогеОписаниеПроизводители
HCS241HMSRRadiation Hardened Inverting Octal Three-State Buffer/Line DriverIntersil Corporation
Intersil Corporation

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